JPS6484643A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To establish an excellent contact even when a semiconductor device design rule is quite fine by a method wherein the surface of a first conductive layer to serve as a mask is converted into silicon oxide allowing the first conductive layer to be improved in its affinity with liquid etchant. CONSTITUTION:A first conductive layer 4 is formed on an insulating film 3 formed on a semiconductor substrate 1. The conductive layer 4 and the insulating film 3 are subjected to selective etching for the exposure of the semiconductor substrate 1. The surface of the conductive layer 4 is then oxidized. A wet etching process follows wherein the exposed section of the semiconductor substrate 1 is affected with the conductive layer 4 serving as a mask. A second conductive layer 8 is provided to cover the exposed section of the semiconductor substrate 1 and the conductive layer 4. The conductive layer 4 and the conductive layer 8 are subjected to selective etching. This design ensures a stable contact in the presence of a very fine semiconductor device design rule.