JPS5448168A - Manufacture of porous silicon oxide film - Google Patents
Manufacture of porous silicon oxide filmInfo
- Publication number
- JPS5448168A JPS5448168A JP11455977A JP11455977A JPS5448168A JP S5448168 A JPS5448168 A JP S5448168A JP 11455977 A JP11455977 A JP 11455977A JP 11455977 A JP11455977 A JP 11455977A JP S5448168 A JPS5448168 A JP S5448168A
- Authority
- JP
- Japan
- Prior art keywords
- film
- porous
- substrate
- formation
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To ensure formation of a minute porous Si pattern by preventing occurrence of the stage error caused by the defect and the uneven surface of the Si substrate, and thus to obrain a highly integrated circuit with a high density.
CONSTITUTION: First, SiO2 film 2 is provided on the surface of p-type Si substrate 1 featuring the specific resistance value of several Ω-cm, with part of the substrate surface is left uncovered with film 2, and SiN film 3 is coated on film 2. Then the area where no film 2 nor 3 is coated on substrate 1 is changed to porous Si film 4 through the anode formation method using the hydrofluoric acid as the formation solution. The whole test sample is then put into an oxidation atmosphere, and Si film 4 is changed to porous Si oxide film 5 through oxidation. Finally, film 3 is removed. And n-type region 6 to be the source region or the drain region, gate insulator film 7 and gate electrode 8, contact hole 9 which is contained in the source region or the drain region, and metal wiring 10 are formed, thus a MIS-type integrated circuit being formed. In this way, the concentration of the hydrofluoric acid of the formation solution is set to a fixed value when the anode is formed to control the density of the porous Si contained in the porous SiO2 film obtained
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11455977A JPS5448168A (en) | 1977-09-26 | 1977-09-26 | Manufacture of porous silicon oxide film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11455977A JPS5448168A (en) | 1977-09-26 | 1977-09-26 | Manufacture of porous silicon oxide film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5448168A true JPS5448168A (en) | 1979-04-16 |
Family
ID=14640828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11455977A Pending JPS5448168A (en) | 1977-09-26 | 1977-09-26 | Manufacture of porous silicon oxide film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5448168A (en) |
-
1977
- 1977-09-26 JP JP11455977A patent/JPS5448168A/en active Pending
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