JPS57153449A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS57153449A
JPS57153449A JP3848681A JP3848681A JPS57153449A JP S57153449 A JPS57153449 A JP S57153449A JP 3848681 A JP3848681 A JP 3848681A JP 3848681 A JP3848681 A JP 3848681A JP S57153449 A JPS57153449 A JP S57153449A
Authority
JP
Japan
Prior art keywords
wiring
integrated circuit
circuit device
igfet
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3848681A
Other languages
Japanese (ja)
Inventor
Yukinobu Murao
Osamu Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3848681A priority Critical patent/JPS57153449A/en
Publication of JPS57153449A publication Critical patent/JPS57153449A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To stabilize the characteristics of an IGFET, and to facilitate ohmic connection between wiring and a substrate by using a high-melting point metal, such as Mo, W, etc. containing P as wiring. CONSTITUTION:When wiring with a gate electrode or a substrate is formed through evaporation or a sputtering method while using Mo, W, etc. containing P as a source, th threshold voltage of the IGFET is stabilized by a passivation effect by P, and the wiring by the high-melting point metal is shaped and the ohmic connection is obtained through high temperature treatment.
JP3848681A 1981-03-17 1981-03-17 Integrated circuit device Pending JPS57153449A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3848681A JPS57153449A (en) 1981-03-17 1981-03-17 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3848681A JPS57153449A (en) 1981-03-17 1981-03-17 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57153449A true JPS57153449A (en) 1982-09-22

Family

ID=12526582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3848681A Pending JPS57153449A (en) 1981-03-17 1981-03-17 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57153449A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49104588A (en) * 1973-02-05 1974-10-03
JPS54159186A (en) * 1978-06-07 1979-12-15 Fujitsu Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49104588A (en) * 1973-02-05 1974-10-03
JPS54159186A (en) * 1978-06-07 1979-12-15 Fujitsu Ltd Semiconductor device

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