JPS5443471A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5443471A
JPS5443471A JP10883477A JP10883477A JPS5443471A JP S5443471 A JPS5443471 A JP S5443471A JP 10883477 A JP10883477 A JP 10883477A JP 10883477 A JP10883477 A JP 10883477A JP S5443471 A JPS5443471 A JP S5443471A
Authority
JP
Japan
Prior art keywords
glass
jig
temperature
substrate
softening temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10883477A
Other languages
Japanese (ja)
Inventor
Masanobu Hanazono
Masaaki Takahashi
Shinichi Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10883477A priority Critical patent/JPS5443471A/en
Publication of JPS5443471A publication Critical patent/JPS5443471A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To prevent occurrence of the bubbles by holding the Si substrate with the galss powder stacked on under the temperature approximate to the glass softening temperature and then heating the test sample from the substrate side to make the glass flow.
CONSTITUTION: The test sample is placed on jig 14 witnin the electric furnace and then heated up to the glass softening temperature. Heater jig 16 is heated up independently at the place distant from the sample, and the temperature is kept at the galss liquid temperature or higher than that by 5W10°C. Then the glass is kept at the glass softening temperature for 5W30 minutes, and jig 16 is put under jig 14 to make the glass flow from the side where the glass touches the Si substrate. With this method, the glass is fused from the substrate side, so the air between the glass powder is not drawn into the glass film. Thus, a uniform glass protective film can be formed with no bubble contained.
COPYRIGHT: (C)1979,JPO&Japio
JP10883477A 1977-09-12 1977-09-12 Manufacture of semiconductor device Pending JPS5443471A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10883477A JPS5443471A (en) 1977-09-12 1977-09-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10883477A JPS5443471A (en) 1977-09-12 1977-09-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5443471A true JPS5443471A (en) 1979-04-06

Family

ID=14494725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10883477A Pending JPS5443471A (en) 1977-09-12 1977-09-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5443471A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626417A (en) * 1983-09-29 1986-12-02 Union Oil Company Of California Methods for chemically reducing nitrogen oxides

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626417A (en) * 1983-09-29 1986-12-02 Union Oil Company Of California Methods for chemically reducing nitrogen oxides

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