JPS646543B2 - - Google Patents
Info
- Publication number
- JPS646543B2 JPS646543B2 JP17932180A JP17932180A JPS646543B2 JP S646543 B2 JPS646543 B2 JP S646543B2 JP 17932180 A JP17932180 A JP 17932180A JP 17932180 A JP17932180 A JP 17932180A JP S646543 B2 JPS646543 B2 JP S646543B2
- Authority
- JP
- Japan
- Prior art keywords
- spin
- film
- glass film
- heat treatment
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011521 glass Substances 0.000 claims description 31
- 239000010410 layer Substances 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 239000011229 interlayer Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 13
- 238000000137 annealing Methods 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910017855 NH 4 F Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Description
【発明の詳細な説明】
本発明は半導体装置の製造方法に係り、特にス
ピンオングラス膜のアニール方法を改良した半導
体装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for manufacturing a semiconductor device by improving a method of annealing a spin-on glass film.
スピンオングラス膜は、塗布不純物拡散源およ
び多層配線の層間絶縁膜として、最近、広く用い
られている。特に多層配線技術においては、レジ
ストと同様スピンコーターで塗布することによつ
て滑らかな表面形状が簡単に得られることから、
層間絶縁膜として非常に有用である。 Spin-on glass films have recently been widely used as coating impurity diffusion sources and interlayer insulating films for multilayer wiring. Particularly in multilayer wiring technology, a smooth surface shape can be easily obtained by coating with a spin coater, similar to resist.
Very useful as an interlayer insulating film.
スピンオングラス膜の組成は、ケイ素化合物を
アルコールに溶解したものである。その為、塗布
した後に熱処理を施すことによりアルコールを蒸
発させて膜をち密化する必要がある。例えば、
CVD法によるシリコン酸化膜と同等のエツチン
グ速度，屈折率，密度を有するスピンオングラス
膜を得るには、500℃以上の熱処理をする必要が
ある。又、熱酸化膜と同等の性質を有する膜の形
成には、1000℃以上の熱処理が必要である。第１
図にNH4Fによるスピンオングラス膜のエツチン
グ速度を30分間の各熱処理温度に対してどのよう
に変化するか示した。このように、エツチング速
度は熱処理温度が高くなればなるほど、小さくな
る傾向を示す。この理由は、第２図に示すよう
に、スピンオングラス膜中の水分量に対応してい
る。すなわち、熱処理温度が高くなればなる程、
スピンオングラス膜中のアルコールおよび水分の
蒸発量が多くなり、膜がち密化する為である。 The composition of the spin-on glass film is a silicon compound dissolved in alcohol. Therefore, it is necessary to perform heat treatment after coating to evaporate the alcohol and densify the film. for example,
In order to obtain a spin-on glass film that has an etching rate, refractive index, and density equivalent to that of a silicon oxide film produced by the CVD method, it is necessary to perform heat treatment at 500°C or higher. Furthermore, heat treatment at 1000° C. or higher is required to form a film having properties equivalent to a thermal oxide film. 1st
The figure shows how the etching rate of the spin-on glass film by NH 4 F changes with respect to each heat treatment temperature for 30 minutes. Thus, the etching rate tends to decrease as the heat treatment temperature increases. The reason for this corresponds to the amount of water in the spin-on glass film, as shown in FIG. In other words, the higher the heat treatment temperature, the more
This is because the amount of evaporation of alcohol and water in the spin-on glass film increases, making the film dense.
スピンオングラス膜を多層配線の層間絶縁膜と
して使用する場合の従来例を第３図を用いて説明
する。まず、第３図ａに示すように素子が形成さ
れ絶縁膜でおおわれた半導体基体上１上に第１の
Al配線層２を形成する。つぎに、第３図ｂに示
すように全面にスピンオングラス膜３を塗布する
と、第１のAl配線層２間がスピンオングラス膜
３によつて埋められて滑らかな表面が形成され
る。その後、スピンオングラス膜３のアニールと
して、例えば400℃〜500℃の熱アニールを加える
と、第３図ｃに示すように、スピンオングラス膜
厚の厚い部分にクラツク４が発生する。この原因
は、熱アニールによつてスピンオングラス膜中の
アルコールおよび水分が蒸発する為、体積が収縮
することによる。特に、スピンオングラス膜厚が
0.4μ以上になるとこのような現象が起きる。第３
図ｄの様に、この上に第２のAl配線層５を形成
すると、スピンオングラス膜３のクラツク４部分
において第２のAl配線層５の段切れ現象が生じ
る。 A conventional example in which a spin-on glass film is used as an interlayer insulating film for multilayer wiring will be described with reference to FIG. First, as shown in FIG.
An Al wiring layer 2 is formed. Next, as shown in FIG. 3B, when a spin-on glass film 3 is applied to the entire surface, the spaces between the first Al wiring layers 2 are filled with the spin-on glass film 3, and a smooth surface is formed. Thereafter, when thermal annealing is applied to the spin-on glass film 3 at, for example, 400° C. to 500° C., cracks 4 are generated in the thick portions of the spin-on glass film, as shown in FIG. 3c. This is because alcohol and water in the spin-on glass film evaporate due to thermal annealing, resulting in volume contraction. In particular, the thickness of the spin-on glass film is
This phenomenon occurs when the thickness exceeds 0.4μ. Third
As shown in FIG. d, when the second Al wiring layer 5 is formed thereon, a breakage phenomenon occurs in the second Al wiring layer 5 at the crack 4 portion of the spin-on glass film 3.
このように上述した従来法にあつては、スピン
オングラス膜の熱アニールによるクラツク発生が
避けられないこと、および熱処理温度を、第１の
Al配線層の基板Siのn+層とのコンタクト部での
Alの突き抜けを防止する意味で450℃程度に抑え
ねばならず、この程度の熱処理温度では、膜中の
水分量も多く、信頼性、特にAl配線の腐食に対
して悪い影響をおよぼすこと、等の欠点がある。 As described above, in the conventional method described above, the generation of cracks due to thermal annealing of the spin-on glass film is unavoidable, and the heat treatment temperature is
At the contact part of the Al wiring layer with the n + layer of the Si substrate
In order to prevent Al penetration, the temperature must be kept at around 450°C. At this level of heat treatment temperature, there is a large amount of moisture in the film, which has a negative effect on reliability, especially corrosion of Al wiring, etc. There are drawbacks.
これに対し、本発明者は酸素プラズマ処理をス
ピンオングラス膜に施すことにより、550〜600℃
の熱アニールをした膜と同等の性質を有すること
を見い出した。更に、酸素プラズマ処理によれ
ば、スピンオングラス膜厚の厚い部分にクラツク
を生じないことも見い出した。これは、酸素プラ
ズマ処理を行うと、スピンオングラス膜内に十分
な量の酸素が供給されて体積収縮を伴うことなく
焼き固められるためと考えられ、この結果良好な
SiO2膜が得られる。 On the other hand, the present inventors have developed a method of applying oxygen plasma treatment to spin-on glass films at temperatures of 550 to 600°C.
It was found that the film has properties equivalent to those of a film that has been thermally annealed. Furthermore, it has been found that oxygen plasma treatment does not cause cracks in the thick portions of the spin-on glass film. This is thought to be due to oxygen plasma treatment supplying a sufficient amount of oxygen into the spin-on glass film and sintering it without volumetric shrinkage, resulting in a good result.
A SiO 2 film is obtained.
この発明の目的は上記知見によるスピンオング
ラス膜の性質を層間絶縁膜として利用し、高い信
頼性を有する多層配線構造を有する半導体装置の
製造方法を提供することにある。 An object of the present invention is to provide a method for manufacturing a semiconductor device having a multilayer wiring structure with high reliability by utilizing the properties of a spin-on glass film based on the above findings as an interlayer insulating film.
すなわち、本発明は、素子が形成され絶縁膜で
おおわれた半導体基体上に第１層目の配線層を設
け、さらにスピンオングラス膜をスピンコーター
で塗布した後、酸素プラズマ処理で低温でスピン
オングラス膜を焼き固めた後、第２層目の配線層
を形成することを特徴とするものである。 That is, the present invention provides a first wiring layer on a semiconductor substrate on which an element is formed and is covered with an insulating film, further coats a spin-on glass film with a spin coater, and then coats the spin-on glass film at a low temperature with oxygen plasma treatment. This method is characterized in that after baking and hardening, a second wiring layer is formed.
次に本発明の実施例を第４図を参照して説明す
る。まず第４図ａに示すように素子が形成された
半導体基体１１上に第１のAl配線層１２を形成
する。つぎに、第４図ｂに示すように全面にスピ
ンオングラス膜１３を塗布して、第１のAl配線
層１２間を埋めて滑らかな表面を形成させる。そ
の後、第３図ｃに示すようにスピンオングラス膜
１３のアニールとして、酸素プラズマ中でアニー
ルを施こす。例えば1torr O2圧力、RFパワー
200Wで30分間処理をしたスピンオングラス膜の
NH4Fによるエツチング速度、膜中の水分量は、
各々第１図，第２図に示したごとくとなり、通常
の熱処理温度に換算すれば〜550℃程度となる。
尚、酸素プラズマ処理では、試料の温度は〜300
℃程度にまでしか上がらず上述の効果は酸素プラ
ズマによるものであることが確められた。又、酸
素プラズマ処理によれば、熱処理によつてスピン
オングラス膜の膜厚の厚い部分に生じたクラツク
が発生しないことも確められた。このように酸素
プラズマ処理を実施した後、第４図ｄの様に、第
２のAl配線層１４を形成する。 Next, an embodiment of the present invention will be described with reference to FIG. First, as shown in FIG. 4a, a first Al wiring layer 12 is formed on a semiconductor substrate 11 on which elements are formed. Next, as shown in FIG. 4B, a spin-on glass film 13 is applied to the entire surface to fill in the spaces between the first Al wiring layers 12 and form a smooth surface. Thereafter, as shown in FIG. 3c, the spin-on glass film 13 is annealed in oxygen plasma. For example 1torr O 2 pressure, RF power
Spin-on glass film treated at 200W for 30 minutes
The etching rate with NH 4 F and the amount of water in the film are as follows:
The results are as shown in FIGS. 1 and 2, respectively, and when converted to a normal heat treatment temperature, it is about 550°C.
In addition, in oxygen plasma treatment, the sample temperature is ~300℃.
It was confirmed that the above-mentioned effect was due to the oxygen plasma. It has also been confirmed that the oxygen plasma treatment does not cause cracks that occur in the thicker parts of the spin-on glass film due to the heat treatment. After carrying out the oxygen plasma treatment in this manner, a second Al wiring layer 14 is formed as shown in FIG. 4d.
以上詳述した如く、本発明によればスピンオン
グラス膜のアニールによるクラツクの発生が防止
でき、しかも、試料温度が300℃程度までしか上
がらないのに拘らず〜550℃熱アニールと同等の
アニール効果を有する為、パシベーシヨン効果の
高い層間絶縁膜を形成でき、もつて信頼性の高い
多層配線構造を実現した半導体装置の製造方法を
程供できるものである。 As detailed above, according to the present invention, it is possible to prevent the occurrence of cracks due to annealing of spin-on glass films, and even though the sample temperature only rises to about 300°C, the annealing effect is equivalent to ~550°C thermal annealing. Therefore, it is possible to form an interlayer insulating film with a high passivation effect, and to provide a method for manufacturing a semiconductor device that realizes a highly reliable multilayer wiring structure.
第１図は、スピンオングラス膜の熱処理温度と
NH4Fによるエツチング速度との関係を示を特性
図、第２図はスピンオングラス膜の熱処理温度と
膜中の水分量との関係を示す特性図、第３図ａ〜
ｄは、従来の熱処理法による半導体装置の製造工
程を示す断面図、第４図ａ〜ｄは本発明の一実施
例における半導体装置の製造工程を示す断面図で
ある。
１１……半導体基体、１２……第１のAl配線
層、１３……スピンオングラス膜（層間絶縁膜）、
１４……第２のAl配線層。
Figure 1 shows the heat treatment temperature and
Figure 2 is a characteristic diagram showing the relationship between the etching rate with NH 4 F, and Figure 2 is a characteristic diagram showing the relationship between the heat treatment temperature of the spin-on glass film and the water content in the film.
4d is a cross-sectional view showing the manufacturing process of a semiconductor device using a conventional heat treatment method, and FIGS. 4a to 4d are cross-sectional views showing the manufacturing process of a semiconductor device according to an embodiment of the present invention. 11... Semiconductor substrate, 12... First Al wiring layer, 13... Spin-on glass film (interlayer insulating film),
14...Second Al wiring layer.
Claims (1)
にスピンオングラス膜をスピンコートすることに
より形成し、ひきつづき前記スピンオングラス膜
を酸素プラズマ中の処理により層間絶縁膜とし、
次いで前記層間絶縁膜上に第２の配線層を形成す
ることを特徴とするする半導体装置の製造方法。1. A first wiring layer is provided on a semiconductor substrate, a spin-on glass film is formed by spin coating thereon, and the spin-on glass film is subsequently treated in oxygen plasma to form an interlayer insulating film,
A method for manufacturing a semiconductor device, characterized in that a second wiring layer is then formed on the interlayer insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17932180A JPS57103333A (en) | 1980-12-18 | 1980-12-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17932180A JPS57103333A (en) | 1980-12-18 | 1980-12-18 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57103333A JPS57103333A (en) | 1982-06-26 |
| JPS646543B2 true JPS646543B2 (en) | 1989-02-03 |
Family
ID=16063785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17932180A Granted JPS57103333A (en) | 1980-12-18 | 1980-12-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57103333A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63164342A (en) * | 1986-12-26 | 1988-07-07 | Matsushita Electric Ind Co Ltd | Formation of insulating film |
| JP2805243B2 (en) * | 1990-08-16 | 1998-09-30 | アプライドマテリアルズジャパン 株式会社 | Prevention of precipitation |
| CN100382251C (en) * | 2002-07-30 | 2008-04-16 | 东京毅力科创株式会社 | Method for forming insulating layer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS542070A (en) * | 1977-06-07 | 1979-01-09 | Toshiba Corp | Manufacture for semiconductor element |
| ATE441T1 (en) * | 1978-06-26 | 1981-12-15 | Contraves Ag | PROCEDURE FOR DIGITAL INTERPOLATION OF A PERIOD OF A THREE-PHASE ANALOG SIGNAL. |
-
1980
- 1980-12-18 JP JP17932180A patent/JPS57103333A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57103333A (en) | 1982-06-26 |
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