JPS5650538A - Formation of multilayered wiring structure - Google Patents

Formation of multilayered wiring structure

Info

Publication number
JPS5650538A
JPS5650538A JP12764679A JP12764679A JPS5650538A JP S5650538 A JPS5650538 A JP S5650538A JP 12764679 A JP12764679 A JP 12764679A JP 12764679 A JP12764679 A JP 12764679A JP S5650538 A JPS5650538 A JP S5650538A
Authority
JP
Japan
Prior art keywords
nitride film
film
plasma
metal
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12764679A
Other languages
Japanese (ja)
Inventor
Natsuo Tsubouchi
Hiroji Harada
Masahiro Yoneda
Koichi Nagasawa
Katsuhiro Hirata
Masahiko Denda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12764679A priority Critical patent/JPS5650538A/en
Publication of JPS5650538A publication Critical patent/JPS5650538A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To omit the process of forming an opening hole in an interlayer insulating film, in the case interlayer connecting of multilayered wiring is performed, by employing a plasma nitride film (a nitride film formed by a plasma CVD method) as the interlayer insulating layer, thermally reacting the copper and the plasma nitride film, and giving the conductive property. CONSTITUTION:An insulating layer 2 comprising an SiO2 film is formed on the main surface of a silicon substrate 1. Then, the first wiring metal layer 10 is formed by a metal, which is not reacted with a nitride film made by a plasma CVD method, e.g., Al. Thereafter a nitride film 11 which is to become the interlayer insulating film is formed by the plasma CVD method, a metal connecting film 12 comprising Cu is selectively formed on the surface, and the heat treatment is performed. Thus, Cu is diffused into the nitride film, and a conductive layer 13 is formed. Thereafter, the second wiring metal layer 14 is formed, a desired pattern is formed, and the itended multilayered wiring structure can be obtained. As for the conductive layer, a metal, other than Cu, which can be readily diffused into the plasma nitride film, and which can make it conductive, can be used.
JP12764679A 1979-10-02 1979-10-02 Formation of multilayered wiring structure Pending JPS5650538A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12764679A JPS5650538A (en) 1979-10-02 1979-10-02 Formation of multilayered wiring structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12764679A JPS5650538A (en) 1979-10-02 1979-10-02 Formation of multilayered wiring structure

Publications (1)

Publication Number Publication Date
JPS5650538A true JPS5650538A (en) 1981-05-07

Family

ID=14965233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12764679A Pending JPS5650538A (en) 1979-10-02 1979-10-02 Formation of multilayered wiring structure

Country Status (1)

Country Link
JP (1) JPS5650538A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988010008A1 (en) * 1987-06-12 1988-12-15 Massachusetts Institute Of Technology Fabrication of interlayer conductive paths in integrated circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988010008A1 (en) * 1987-06-12 1988-12-15 Massachusetts Institute Of Technology Fabrication of interlayer conductive paths in integrated circuits

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