JPS57177558A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57177558A
JPS57177558A JP6214381A JP6214381A JPS57177558A JP S57177558 A JPS57177558 A JP S57177558A JP 6214381 A JP6214381 A JP 6214381A JP 6214381 A JP6214381 A JP 6214381A JP S57177558 A JPS57177558 A JP S57177558A
Authority
JP
Japan
Prior art keywords
layer
laminated
etching
coated
auxiliary layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6214381A
Other languages
Japanese (ja)
Inventor
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6214381A priority Critical patent/JPS57177558A/en
Publication of JPS57177558A publication Critical patent/JPS57177558A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To provide the electrode structure and the multilayer wiring with high reliability by a method wherein the auxiliary layer with high etching ratio is laminated on the conductive layer coated with an insulating film with a hole opened down to the conductive layer which is simultaneously coated with the filler layer to be etched at low etching ratio and after removing said auxiliary layer coated with said filler layer by means of etching, further laminated on another conductive layer. CONSTITUTION:The MOSFET is formed on the P type Si substrate 1 as usual and coated with PSG8. Then the Si auxiliary layer 9 added with phosphorus is laminated on the MOSFET and after forming an electrode hole, the poly Si 10 without the additive and with th same thickness as the width of said hole is laminated by means of the CVD process. The auxiliary layer 9 with high etching ratio prevents the etching speed from being accelerated abruptly by means of the CCl4 reacting ion etching making the filler layer 10 flush with the layer 8. Next Al 11 is, after evaporation and patterning, low temperature processed in N2+H2 to be alloyed. In this constitution, Al 11 may be formed into a fine electrode with high reliability because it is never disconnected without corrosion due to the application of PSG8 with low concentration.
JP6214381A 1981-04-24 1981-04-24 Semiconductor device and manufacture thereof Pending JPS57177558A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6214381A JPS57177558A (en) 1981-04-24 1981-04-24 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6214381A JPS57177558A (en) 1981-04-24 1981-04-24 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57177558A true JPS57177558A (en) 1982-11-01

Family

ID=13191574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6214381A Pending JPS57177558A (en) 1981-04-24 1981-04-24 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57177558A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62176147A (en) * 1985-10-03 1987-08-01 ビュル　エス．アー． Method for forming multilayer metal wiring network for mutual connection between components ofhigh density integrated circuit and integrated circuit formed by the method
JPH01102938A (en) * 1987-09-25 1989-04-20 American Teleph & Telegr Co <Att> Manufacture of semiconductor integrated circuit
JPH0634965U (en) * 1992-09-09 1994-05-10 本村製本株式会社 Book
US8640973B2 (en) 2006-09-07 2014-02-04 Briggs And Stratton Corporation Pressure washer wand having a nozzle selector

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62176147A (en) * 1985-10-03 1987-08-01 ビュル　エス．アー． Method for forming multilayer metal wiring network for mutual connection between components ofhigh density integrated circuit and integrated circuit formed by the method
JPH01102938A (en) * 1987-09-25 1989-04-20 American Teleph & Telegr Co <Att> Manufacture of semiconductor integrated circuit
JPH0634965U (en) * 1992-09-09 1994-05-10 本村製本株式会社 Book
US8640973B2 (en) 2006-09-07 2014-02-04 Briggs And Stratton Corporation Pressure washer wand having a nozzle selector

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