JPS6450526A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent breakage of a gate oxide film, by forming a polymer film to cover the surface of an active film and at least a part of a gate region so that dopant ions are implanted into the upper parts of the active layer through the polymer film for forming drain and source regions. CONSTITUTION:Dopant ions are implanted from over, a semiconductor active layer 1 on which a gate region is deposited through a gate insulating film 3, so that drain and source regions 2 are formed in the upper parts of the active layer 1. In order to produce a semiconductor device in this manner, a polymer film 6 is formed to cover the surface of the active layer 1 and at least a part of the gate region 4, and the dopant ions are implanted through the polymer film 6 into the upper parts of the active layer 1. According to an embodiment, after a gate oxide film 3, a gate region 4 and a field oxide film 5 are formed on a semiconductor substrate 1, a polymer film 6 with a thickness of about 10Angstrom or more is formed by plasma treatment or the like to cover the regions 2 in the semiconductor substrate 1, the gate oxide film 3, the gate region 4 and the field oxide film 5, and then ion implantation is performed through the polymer film 6.