JPS55145374A - Insulated gate field effect semiconductor device and fabricating method of the same - Google Patents
Insulated gate field effect semiconductor device and fabricating method of the sameInfo
- Publication number
- JPS55145374A JPS55145374A JP5326179A JP5326179A JPS55145374A JP S55145374 A JPS55145374 A JP S55145374A JP 5326179 A JP5326179 A JP 5326179A JP 5326179 A JP5326179 A JP 5326179A JP S55145374 A JPS55145374 A JP S55145374A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon nitride
- semiconductor device
- same
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- -1 NItrogen ion Chemical class 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To control the thickness of a silicon nitride film by controlling the accelerating voltage of an ion implantation. CONSTITUTION:A silicon oxide film 2 corresponding to a field insulating film and a high impurity density region 3 are formed on a substrate 1. NItrogen ion is implanted over the entire substrate to form a silicon nitride film 4 on the active region and a silicon trinitride film on the field insulating film. The film thickness is controlled by varying the accelerating voltage arbitrarily. Thereafter, a gate electrode 6 is formed on the silicon nitride film 4, and a pair of impurity regions are further formed as source 7 and drain 8 so as to provide a short channel type MISFET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5326179A JPS55145374A (en) | 1979-04-28 | 1979-04-28 | Insulated gate field effect semiconductor device and fabricating method of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5326179A JPS55145374A (en) | 1979-04-28 | 1979-04-28 | Insulated gate field effect semiconductor device and fabricating method of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55145374A true JPS55145374A (en) | 1980-11-12 |
Family
ID=12937825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5326179A Pending JPS55145374A (en) | 1979-04-28 | 1979-04-28 | Insulated gate field effect semiconductor device and fabricating method of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55145374A (en) |
-
1979
- 1979-04-28 JP JP5326179A patent/JPS55145374A/en active Pending
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