JPH04291733A - Gaas device and forming method for t-shaped gate electorode - Google Patents
Gaas device and forming method for t-shaped gate electorodeInfo
- Publication number
- JPH04291733A JPH04291733A JP5650991A JP5650991A JPH04291733A JP H04291733 A JPH04291733 A JP H04291733A JP 5650991 A JP5650991 A JP 5650991A JP 5650991 A JP5650991 A JP 5650991A JP H04291733 A JPH04291733 A JP H04291733A
- Authority
- JP
- Japan
- Prior art keywords
- shaped gate
- gate electrode
- gate
- resist
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 4
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 5
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 230000005865 ionizing radiation Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、電界効果トランジスタ
のゲート電極のように、T字型の足部の幅がT字型ゲー
トの上部はり出し部に比較して極めて狭いものであって
も構造上安定となるGaAsデバイス及びT字型ゲート
電極の作成方法に関する。[Industrial Application Field] The present invention can be applied even when the width of the T-shaped foot is extremely narrow compared to the upper protruding part of the T-shaped gate, such as the gate electrode of a field effect transistor. The present invention relates to a GaAs device that is structurally stable and a method for producing a T-shaped gate electrode.
【0002】0002
【従来の技術】化合物電界効果トランジスタの高周波化
、高性能化にはゲート長の短縮化とゲート抵抗の低減化
が有効であり、その両者を同時に改善する方法として、
T字型(マッシュルーム型)ゲート形成が各方面で取り
組まれている。[Prior Art] Shortening the gate length and reducing gate resistance are effective for increasing the frequency and performance of compound field effect transistors.As a method for improving both at the same time,
Formation of T-shaped (mushroom-shaped) gates is being worked on in various fields.
【0003】従来、T字型ゲートは、図2Aに示すよう
に、まずGaAs基板1上に種類の異なるレジスト6,
7を重ねて塗布した後、図2Bに示すように上層レジス
ト7をパターニングし、その後図2Cに示すように下層
レジスト6をパターニングしてT字型の抜けパターンを
形成し、得られたパターンに図2Dに示すようにアルミ
ニウムからなる電極材料8を成膜し、その後図2Eに示
すように下層レジスト6及び上層レジスト7をリフトオ
フすることによって形成されている。Conventionally, as shown in FIG. 2A, a T-shaped gate has been manufactured by first depositing different types of resists 6 and 6 on a GaAs substrate 1.
7, the upper layer resist 7 is patterned as shown in FIG. 2B, and then the lower layer resist 6 is patterned as shown in FIG. 2C to form a T-shaped pattern, and the resulting pattern is It is formed by depositing an electrode material 8 made of aluminum as shown in FIG. 2D, and then lifting off the lower resist 6 and upper resist 7 as shown in FIG. 2E.
【0004】0004
【発明が解決しようとする課題】しかしながら、図3に
示すように、T字型ゲート9の足部10幅Lg がゲー
ト上部のはり出し部分(ひさし部)11に対して極度に
細くなると、ゲートが構造上不安定となり、その結果、
リフトオフ工程等でゲート上部と下部がちぎれたり、ゲ
ートが倒れてしまったり、ゲートと基板とが離れてしま
ったりして、電極としての機能が低下してしまうという
問題点があった。However, as shown in FIG. 3, if the width Lg of the foot portion 10 of the T-shaped gate 9 becomes extremely narrow relative to the protruding portion (eaves portion) 11 at the top of the gate, the gate becomes structurally unstable, and as a result,
There have been problems in that the upper and lower parts of the gate may be torn off during the lift-off process, the gate may fall down, or the gate may become separated from the substrate, resulting in a decline in its function as an electrode.
【0005】これに対して特開昭63−192277号
公報には図4に示すようにT字型ゲート電極9の足部1
0の両側に該足部を挟むようにゲート電極支持パターン
12を設けることが提案されており、これによってT字
型ゲート電極の安定性を高めることができる。On the other hand, Japanese Patent Laid-Open No. 63-192277 discloses that the foot portion 1 of the T-shaped gate electrode 9 is as shown in FIG.
It has been proposed to provide gate electrode support patterns 12 on both sides of the T-shaped gate electrode so as to sandwich the foot portions, thereby increasing the stability of the T-shaped gate electrode.
【0006】本発明は図4に示す構造を更に発展させ、
T字型ゲート電極支持パターンを安定的に形成すること
ができるばかりでなく、不要なレジスト及びゲート電極
用金属を良好に除去することができるGaAsデバイス
及びT字型ゲート電極の作成方法を提供することを目的
とするものである。The present invention further develops the structure shown in FIG.
To provide a GaAs device and a method for producing a T-shaped gate electrode, which not only can stably form a T-shaped gate electrode support pattern but also can remove unnecessary resist and gate electrode metal well. The purpose is to
【0007】[0007]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明のGaAsデバイスは、T字型ゲート電極
足部の両側に該足部を挟むように絶縁性材料からなるゲ
ート電極支持パターンを備えたGaAsデバイスにおい
て、前記ゲート電極支持パターンの両外端部の距離が前
記T字型ゲート電極の上部はり出し部分の長さより大き
いことを特徴とし、また本発明のT字型ゲート電極の作
成方法は、基板上にレジストによりT字型ゲート電極の
足部を挟むようにかつ、両外端部の距離が該T字型ゲー
トの上部はり出し部分よりも大きくなるようにT字型ゲ
ート電極支持パターンをパターニングする工程と、前記
T字型ゲート電極支持パターン上に別のレジストにより
該T字型ゲート電極の上部はり出し部のパターニングを
行う工程と、ゲート電極用金属を蒸着し、リフトオフを
行う工程とを有することを特徴とする。[Means for Solving the Problems] In order to achieve the above object, the GaAs device of the present invention includes gate electrode supports made of an insulating material on both sides of the T-shaped gate electrode foot so as to sandwich the foot. A GaAs device having a pattern, characterized in that the distance between both outer ends of the gate electrode support pattern is greater than the length of the upper protruding portion of the T-shaped gate electrode, and the T-shaped gate electrode of the present invention The method for creating the T-shaped gate electrode is to sandwich the legs of the T-shaped gate electrode with resist on the substrate, and to make the T-shaped gate electrode so that the distance between both outer ends is larger than the upper protruding part of the T-shaped gate. a step of patterning a gate electrode support pattern, a step of patterning an upper protruding portion of the T-shaped gate electrode with another resist on the T-shaped gate electrode support pattern, and evaporating a gate electrode metal; The method is characterized by comprising a step of performing lift-off.
【0008】[0008]
【作用】本発明によれば、T字型ゲート電極の足部の両
側に該足部を挟むゲート支持パターンを安定的に形成す
ることができるので、リフトオフ等の工程においてレジ
スト及び不要な金属層を安定的に除去することができ、
以て構造上安定なT字型ゲート電極を作成することがで
きる。[Operation] According to the present invention, it is possible to stably form gate support patterns sandwiching the foot portions on both sides of the foot portions of the T-shaped gate electrode, so that resist and unnecessary metal layers can be removed during lift-off and other processes. can be stably removed,
Thus, a structurally stable T-shaped gate electrode can be created.
【0009】[0009]
【実施例】以下、本発明の実施例を図面を参照しつつ説
明する。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.
【0010】GaAsウェーハ基板を用いたHEMT(
高電子移動度トランジスタ:High Electro
nMobility Transistor)デバイス
のT字型ゲート電極を以下の手順で作成した。[0010] HEMT using a GaAs wafer substrate (
High electron mobility transistor: High Electro
A T-shaped gate electrode of an nMobility Transistor device was created using the following procedure.
【0011】図1A〜Fは本発明によるHEMTデバイ
スの製造工程を示す断面図であり、図中、1はHEMT
用GaAs基板、2はT字型ゲート下部形成用レジスト
、3は光または電離放射線、4はT字型ゲート上部形成
用レジスト、5はT字型ゲート用金属を示す。FIGS. 1A to 1F are cross-sectional views showing the manufacturing process of the HEMT device according to the present invention, in which 1 indicates the HEMT device.
2 is a resist for forming the lower part of the T-shaped gate, 3 is light or ionizing radiation, 4 is a resist for forming the upper part of the T-shaped gate, and 5 is a metal for the T-shaped gate.
【0012】まず、図1Aに示すように、HEMT用G
aAs基板1上にネガ型EBレジストSAL−601−
ER7(シプレイ社製)をスピンナー塗布したものを9
0℃で30分間プリベークし、厚さ 0.3μmの均一
なレジスト膜2を形成し、電子線により0.25μm幅
のT字型ゲート足部を挟むように 0.3μm幅のライ
ンパターン2本が残るように描画した後、110 ℃で
5分間露光後ベークを行い、アルカリ水溶液で23℃
、2 分間浸漬して現像し、純水で23℃、30秒間リ
ンスして、図1Bに示すような0.25μm離れた 0
.3μm幅のラインパターンを得た。なお、図1Bにお
いて2本のラインパターンの両外端部の距離LはT字型
ゲートのひさし部よりも大きくなされている。First, as shown in FIG. 1A, the HEMT G
Negative EB resist SAL-601- on aAs substrate 1
9 coated with ER7 (manufactured by Shipley) using a spinner.
Prebaking at 0°C for 30 minutes to form a uniform resist film 2 with a thickness of 0.3 μm, and then using an electron beam to form two line patterns with a width of 0.3 μm so as to sandwich the T-shaped gate foot with a width of 0.25 μm. After drawing the image so that it remains, perform a post-exposure bake at 110 °C for 5 minutes, and heat it at 23 °C with an alkaline aqueous solution.
, immersed for 2 minutes, developed, rinsed with pure water at 23°C for 30 seconds, and separated by 0.25 μm as shown in Figure 1B.
.. A line pattern with a width of 3 μm was obtained. Note that in FIG. 1B, the distance L between both outer ends of the two line patterns is larger than the eaves of the T-shaped gate.
【0013】次に、図1Cに示すように、ノボラック系
ポジ型フォトレジストAZ−1350(ヘキスト社製)
をスピンナー塗布したものを、90℃で30分間ベーキ
ングし、膜厚 0.8μmのT字型ゲート上部形成用レ
ジスト膜4を形成した後、紫外線3により 0.8μm
幅のゲートパターンを露光し、その後、テトラメチルア
ンモニウムハイドロオキサイドを主成分とするアルカリ
水溶液に23℃で 1分間浸漬して現像し、純水で 1
分間リンスして図1Dに示すようなレジストパターンを
得た。Next, as shown in FIG. 1C, a novolac positive photoresist AZ-1350 (manufactured by Hoechst) was applied.
was coated with a spinner and baked at 90°C for 30 minutes to form a resist film 4 for forming the upper part of the T-shaped gate with a film thickness of 0.8 μm.
A gate pattern of the same width was exposed, then developed by immersing it in an alkaline aqueous solution containing tetramethylammonium hydroxide as its main component at 23°C for 1 minute, and then dipping it in pure water for 1 minute.
After rinsing for a minute, a resist pattern as shown in FIG. 1D was obtained.
【0014】次に、図1Dに示すようなレジストパター
ンに紫外線3を全面露光した後、図1Eに示すように、
蒸着法によりAlを 0.6μm堆積させ、T字型ゲー
ト形成用金属層5を成膜した後、テトラメチルアンモニ
ウムハイドロオキサイドを主成分とするアルカリ水溶液
を用いてレジスト4を溶解させると同時に、レジスト4
上のT字型ゲート形成用金属層5を除去し、図1Fに示
すような、足部をレジスト2で挟むように支持された0
.25μmのゲート長を有するT字型ゲート電極を作成
した。Next, after exposing the entire surface of the resist pattern as shown in FIG. 1D to ultraviolet rays 3, as shown in FIG. 1E,
After depositing Al to a thickness of 0.6 μm by vapor deposition to form a metal layer 5 for forming a T-shaped gate, the resist 4 is dissolved using an alkaline aqueous solution containing tetramethylammonium hydroxide as a main component, and at the same time, the resist 4 is dissolved. 4
The upper T-shaped gate forming metal layer 5 is removed, and the resist 2 is supported with its legs sandwiched between resists 2, as shown in FIG. 1F.
.. A T-shaped gate electrode with a gate length of 25 μm was created.
【0015】以上、本発明の一実施例について説明した
が、本発明は上記実施例に限定されるものではなく、種
々の変形が可能であり、特に商品名をあげたレジストに
ついては、使用できるレジストの一例として挙げたもの
であって、これに限定されるものではないことは銘記さ
れるべきものである。現像液、リンス液についても同様
である。Although one embodiment of the present invention has been described above, the present invention is not limited to the above embodiment and can be modified in various ways. It should be noted that this is an example of the resist, and is not limited to this. The same applies to the developing solution and the rinsing solution.
【0016】[0016]
【発明の効果】以上のように本発明によれば、T字型ゲ
ート下部に設ける2本のラインパターンからなる支持パ
ターンの両外端部の距離をT字型ゲートのひさし部より
も大きくしたので、T字型ゲート上部形成用レジスト膜
4及びT字型ゲート形成用金属層5を良好にリフトオフ
することができ、以て支持パターンによりゲート長が0
.15μm以下のように小さくなった場合においてもT
字型ゲートの足部を安定的に支持することができるばか
りでなく、再現性よくT字型ゲートを作成できる効果が
ある。[Effects of the Invention] As described above, according to the present invention, the distance between both outer ends of the support pattern consisting of two line patterns provided at the bottom of the T-shaped gate is made larger than the eaves of the T-shaped gate. Therefore, the resist film 4 for forming the upper part of the T-shaped gate and the metal layer 5 for forming the T-shaped gate can be lifted off well, and the gate length can be reduced to 0 due to the support pattern.
.. Even when the T is as small as 15 μm or less,
Not only can the legs of the gate be stably supported, but also the T-shaped gate can be created with good reproducibility.
【図1】 本発明の一実施例によるHEMTデバイス
用T字型ゲートの製造工程を示す断面図である。FIG. 1 is a cross-sectional view showing a manufacturing process of a T-shaped gate for a HEMT device according to an embodiment of the present invention.
【図2】 従来のHEMTデバイス用T字型ゲートの
製造工程を示す断面図である。FIG. 2 is a cross-sectional view showing the manufacturing process of a conventional T-shaped gate for HEMT devices.
【図3】 従来の方法で得られたT字型ゲートの断面
図である。FIG. 3 is a cross-sectional view of a T-shaped gate obtained by a conventional method.
【図4】 ゲート電極支持パターンを示す図である。FIG. 4 is a diagram showing a gate electrode support pattern.
1…HEMT用GaAs基板、2…T字型ゲート下部形
成用レジスト、3…光または電離放射線、4…T字型ゲ
ート上部形成用レジスト、5…T字型ゲート用金属。DESCRIPTION OF SYMBOLS 1... GaAs substrate for HEMT, 2... Resist for forming the lower part of T-shaped gate, 3... Light or ionizing radiation, 4... Resist for forming the upper part of T-shaped gate, 5... Metal for T-shaped gate.
Claims (2)
を挟むように絶縁性材料からなるゲート電極支持パター
ンを備えたGaAsデバイスにおいて、前記ゲート電極
支持パターンの両外端部の距離が前記T字型ゲート電極
の上部はり出し部分の長さより大きいことを特徴とする
GaAsデバイス。1. In a GaAs device comprising a gate electrode support pattern made of an insulating material on both sides of a T-shaped gate electrode foot so as to sandwich the foot, the distance between both outer ends of the gate electrode support pattern is as follows: is larger than the length of the upper protruding portion of the T-shaped gate electrode.
電極の足部を挟むようにかつ、両外端部の距離が該T字
型ゲートの上部はり出し部分よりも大きくなるようにT
字型ゲート電極支持パターンをパターニングする工程と
、前記T字型ゲート電極支持パターン上に別のレジスト
により該T字型ゲート電極の上部はり出し部のパターニ
ングを行う工程と、ゲート電極用金属を蒸着し、リフト
オフを行う工程とを有することを特徴とするT字型ゲー
ト電極の作成方法。2. A T-shaped gate electrode is formed on the substrate so that the legs of the T-shaped gate electrode are sandwiched between resists, and the distance between both outer ends is larger than the upper protruding part of the T-shaped gate.
a step of patterning a T-shaped gate electrode support pattern, a step of patterning an upper protruding portion of the T-shaped gate electrode using another resist on the T-shaped gate electrode support pattern, and vapor deposition of a gate electrode metal. and a step of performing lift-off.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3056509A JP3071481B2 (en) | 1991-03-20 | 1991-03-20 | Method for forming GaAs device and T-shaped gate electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3056509A JP3071481B2 (en) | 1991-03-20 | 1991-03-20 | Method for forming GaAs device and T-shaped gate electrode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04291733A true JPH04291733A (en) | 1992-10-15 |
JP3071481B2 JP3071481B2 (en) | 2000-07-31 |
Family
ID=13029096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3056509A Expired - Fee Related JP3071481B2 (en) | 1991-03-20 | 1991-03-20 | Method for forming GaAs device and T-shaped gate electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3071481B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012094726A (en) * | 2010-10-28 | 2012-05-17 | Fujitsu Ltd | Field-effect transistor and method of manufacturing the same |
JP2014183094A (en) * | 2013-03-18 | 2014-09-29 | Fujitsu Ltd | Semiconductor device and semiconductor device manufacturing method |
CN117637456A (en) * | 2024-01-26 | 2024-03-01 | 合肥欧益睿芯科技有限公司 | Semiconductor device, gate manufacturing method thereof and electronic equipment |
-
1991
- 1991-03-20 JP JP3056509A patent/JP3071481B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012094726A (en) * | 2010-10-28 | 2012-05-17 | Fujitsu Ltd | Field-effect transistor and method of manufacturing the same |
JP2014183094A (en) * | 2013-03-18 | 2014-09-29 | Fujitsu Ltd | Semiconductor device and semiconductor device manufacturing method |
CN117637456A (en) * | 2024-01-26 | 2024-03-01 | 合肥欧益睿芯科技有限公司 | Semiconductor device, gate manufacturing method thereof and electronic equipment |
CN117637456B (en) * | 2024-01-26 | 2024-06-11 | 合肥欧益睿芯科技有限公司 | Semiconductor device, gate manufacturing method thereof and electronic equipment |
Also Published As
Publication number | Publication date |
---|---|
JP3071481B2 (en) | 2000-07-31 |
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