JPS57183071A - Formation of recess type fine multi-layer gate electrode - Google Patents

Formation of recess type fine multi-layer gate electrode

Info

Publication number
JPS57183071A
JPS57183071A JP6796281A JP6796281A JPS57183071A JP S57183071 A JPS57183071 A JP S57183071A JP 6796281 A JP6796281 A JP 6796281A JP 6796281 A JP6796281 A JP 6796281A JP S57183071 A JPS57183071 A JP S57183071A
Authority
JP
Japan
Prior art keywords
metal film
film
gate electrode
mask
type fine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6796281A
Other languages
Japanese (ja)
Inventor
Masaoki Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6796281A priority Critical patent/JPS57183071A/en
Publication of JPS57183071A publication Critical patent/JPS57183071A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a recess type fine multi-layer gate electrode with excellent highfrequency characteristics by a method wherein metal films of Mo, Pt and Au are formed on a semiconductor substrate and a mask is formed on them and the metal films are removed by etching except those under the mask. CONSTITUTION:A metal film 20 of Mo is formed on a GaAs semiconductor substrate 1 by beam deposition in high vacuum at 200-300 deg.C and then a metal film 30 of Pt is formed. Then the substrate is heated at 100 deg.C and a metal film 40 of Au is formed. Then the substrate is taken out in the atmosphere and a Ti film 50 is formed on the film 40 and a mask 60 of photoresist is formed to the required gate region. After that the metal film 40 of Au, the metal film 30 of Pt and the metal film 20 of Mo are removed by etching except those under the mask 60 and the Ti film 50. Moreover, a source electrode 80 and a drain electrode 90 are formed by lifting-off using conventional resist and a GaAs FET which has a recess type fine multi-layer gate electrode can be obtained.
JP6796281A 1981-05-06 1981-05-06 Formation of recess type fine multi-layer gate electrode Pending JPS57183071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6796281A JPS57183071A (en) 1981-05-06 1981-05-06 Formation of recess type fine multi-layer gate electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6796281A JPS57183071A (en) 1981-05-06 1981-05-06 Formation of recess type fine multi-layer gate electrode

Publications (1)

Publication Number Publication Date
JPS57183071A true JPS57183071A (en) 1982-11-11

Family

ID=13360092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6796281A Pending JPS57183071A (en) 1981-05-06 1981-05-06 Formation of recess type fine multi-layer gate electrode

Country Status (1)

Country Link
JP (1) JPS57183071A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002052626A3 (en) * 2000-12-22 2003-02-13 United Monolithic Semiconduct Method for producing a microelectronic component and component produced according to said method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002052626A3 (en) * 2000-12-22 2003-02-13 United Monolithic Semiconduct Method for producing a microelectronic component and component produced according to said method

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