JPS5713759A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5713759A
JPS5713759A JP8937180A JP8937180A JPS5713759A JP S5713759 A JPS5713759 A JP S5713759A JP 8937180 A JP8937180 A JP 8937180A JP 8937180 A JP8937180 A JP 8937180A JP S5713759 A JPS5713759 A JP S5713759A
Authority
JP
Japan
Prior art keywords
silicon film
film
groove
nitrided
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8937180A
Other languages
Japanese (ja)
Other versions
JPH0131311B2 (en
Inventor
Akira Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8937180A priority Critical patent/JPS5713759A/en
Publication of JPS5713759A publication Critical patent/JPS5713759A/en
Publication of JPH0131311B2 publication Critical patent/JPH0131311B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To eliminate the step of etching the side of a nitrided silicon film by forming a groove on the nitrided silicon film with a polycrystalline silicon film as a mask and etching the polycrystalline silicon film under the groove. CONSTITUTION:A nitrided silicon film 10, dioxidized silicon film 6 and a photoresist film are formed on a nondoped polycrystalline silicon layer 4 formed on an insulating film 2 and a base region 3, is patterned, boron is injected in high dosage to the polycrystal and a p<+> type is formed. With the photoresist retained the polycrystalline film 12 is then evaporated, and is lifted off together with the resist. Subsequently, a light etching treatment is carried out to form a groove 6', and the nitrided silicon film is etched via the groove 6'. With the film 10 as a mask the layer 4 is etched to form an emitter contact 4e and a base contact 4b.
JP8937180A 1980-06-30 1980-06-30 Manufacture of semiconductor device Granted JPS5713759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8937180A JPS5713759A (en) 1980-06-30 1980-06-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8937180A JPS5713759A (en) 1980-06-30 1980-06-30 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5713759A true JPS5713759A (en) 1982-01-23
JPH0131311B2 JPH0131311B2 (en) 1989-06-26

Family

ID=13968827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8937180A Granted JPS5713759A (en) 1980-06-30 1980-06-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5713759A (en)

Also Published As

Publication number Publication date
JPH0131311B2 (en) 1989-06-26

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