JPS6489444A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6489444A JPS6489444A JP24415487A JP24415487A JPS6489444A JP S6489444 A JPS6489444 A JP S6489444A JP 24415487 A JP24415487 A JP 24415487A JP 24415487 A JP24415487 A JP 24415487A JP S6489444 A JPS6489444 A JP S6489444A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxidation
- region
- polysilicon
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To simplify the manufacturing process and to improve the yield rate, by performing thermal oxidation of a semiconductor film, which is grown on the surface of a semiconductor substrate and in which specifed impurities are added, and forming a thick oxide film constituting an element isolating region and a channel stopper region at the same time. CONSTITUTION:A polysilicon film 15, which includes phosphorus, i.e., p-type impurities, is grown on the surface of a silicon substrate 11, which is exposed through a hole 14. Then thermal oxidation is performed and the polysilicon film 15 is oxidized. A thick SiO2 film 16 is formed. The oxidizing speed of the SiO2 film 16 is very fast. The oxidation can be performed in a short time without increasing the oxidation temperature. After an element isolating region is formed, an Si3N4 film 13 is removed. A gate electrode 18 comprising polysilicon, into which phosphorus is diffused, is formed. With the gate electrode and the thick SiO2 film 16 as masks, a source region 19 and a drain region 20 are formed. Therefore, the oxidation can be carried out in a short time at a low temperature. The manufacturing process becomes simple, and the yield rate of the products can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24415487A JPS6489444A (en) | 1987-09-30 | 1987-09-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24415487A JPS6489444A (en) | 1987-09-30 | 1987-09-30 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6489444A true JPS6489444A (en) | 1989-04-03 |
Family
ID=17114564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24415487A Pending JPS6489444A (en) | 1987-09-30 | 1987-09-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6489444A (en) |
-
1987
- 1987-09-30 JP JP24415487A patent/JPS6489444A/en active Pending
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