JPS5745258A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5745258A
JPS5745258A JP12084380A JP12084380A JPS5745258A JP S5745258 A JPS5745258 A JP S5745258A JP 12084380 A JP12084380 A JP 12084380A JP 12084380 A JP12084380 A JP 12084380A JP S5745258 A JPS5745258 A JP S5745258A
Authority
JP
Japan
Prior art keywords
silicon
oxide film
impurities
polycrystal silicon
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12084380A
Other languages
Japanese (ja)
Inventor
Michihiro Oota
Jiro Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12084380A priority Critical patent/JPS5745258A/en
Publication of JPS5745258A publication Critical patent/JPS5745258A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Abstract

PURPOSE:To separate an element positively without increasing manufacturing processes by a method wherein impurities are diffused from polycrystal silicon, and the polycrystal silicon is thermally treated, and changed into an oxide film. CONSTITUTION:A silicon oxide film 2 and a silicon nitride film 3 are formed onto a silicon substrate 1, and sections except an element forming region section are removed through etching. The polycrystal silicon layer 4 containing the impurities of the same conduction type as the substrate is shaped, the polycrystal silicon 4 of the element forming region is removed and a thermal oxide film 6 is molded. The nitride film 3 and the oxide film 2 of source and drain regions and a diffusion wiring region section are removed. Impurities are introduced to the source and drain regions while the regions are thermally oxidized, the impurities in the polycrytal silicon 4 are diffused and a channel stopper 5 is shaped, and the polycrystal silicon 4 is changed into the oxide film 9.
JP12084380A 1980-09-01 1980-09-01 Manufacture of semiconductor device Pending JPS5745258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12084380A JPS5745258A (en) 1980-09-01 1980-09-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12084380A JPS5745258A (en) 1980-09-01 1980-09-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5745258A true JPS5745258A (en) 1982-03-15

Family

ID=14796327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12084380A Pending JPS5745258A (en) 1980-09-01 1980-09-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745258A (en)

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