JPS5651852A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS5651852A JPS5651852A JP12675979A JP12675979A JPS5651852A JP S5651852 A JPS5651852 A JP S5651852A JP 12675979 A JP12675979 A JP 12675979A JP 12675979 A JP12675979 A JP 12675979A JP S5651852 A JPS5651852 A JP S5651852A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- mask
- semiconductor device
- manufacturing
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To simplify the manufacturing of the semiconductor device, by controlling the mask effect in an ion-injecting region and reducing number of ion-injecting works. CONSTITUTION:By boring an opening 4 on SiO2 2 of an Si substrate 1, a resist mask 5 is provided. By etching the SiO2 2 to a prescribed film thickness, a region 10 is prepared. The mask 5 is removed and ion of BF3 11 is injected. A dosing amount, a depth from the surface and an average value of Si projection distance are appropriately selected. And then, by annealing in N2, a low-resistance layer 8 and a high-resistance layer 9 can be formed at the same time by only one ion-projecting process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12675979A JPS5651852A (en) | 1979-10-03 | 1979-10-03 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12675979A JPS5651852A (en) | 1979-10-03 | 1979-10-03 | Manufacturing of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5651852A true JPS5651852A (en) | 1981-05-09 |
Family
ID=14943210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12675979A Pending JPS5651852A (en) | 1979-10-03 | 1979-10-03 | Manufacturing of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5651852A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59155961A (en) * | 1983-02-25 | 1984-09-05 | Rohm Co Ltd | Manufacture of semiconductor device |
-
1979
- 1979-10-03 JP JP12675979A patent/JPS5651852A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59155961A (en) * | 1983-02-25 | 1984-09-05 | Rohm Co Ltd | Manufacture of semiconductor device |
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