GB984141A - Improvements in or relating to methods of alloying to semiconductor bodies - Google Patents
Improvements in or relating to methods of alloying to semiconductor bodiesInfo
- Publication number
- GB984141A GB984141A GB3664/62A GB366462A GB984141A GB 984141 A GB984141 A GB 984141A GB 3664/62 A GB3664/62 A GB 3664/62A GB 366462 A GB366462 A GB 366462A GB 984141 A GB984141 A GB 984141A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alloying
- heated
- relating
- methods
- semiconductor bodies
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005275 alloying Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 229910002804 graphite Inorganic materials 0.000 abstract 2
- 239000010439 graphite Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- YVIMHTIMVIIXBQ-UHFFFAOYSA-N [SnH3][Al] Chemical compound [SnH3][Al] YVIMHTIMVIIXBQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001508 alkali metal halide Inorganic materials 0.000 abstract 1
- 150000008045 alkali metal halides Chemical class 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 239000000374 eutectic mixture Substances 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 239000011780 sodium chloride Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S228/00—Metal fusion bonding
- Y10S228/903—Metal to nonmetal
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
Abstract
<PICT:0984141/C6-C7/1> In a process for forming an alloy junction on a semi-conductor such as silicon or germanium, a metal or alloy in the solid state, e.g. aluminium or tin-aluminium, is applied to the surface of the semi-conductor and heated above 500 DEG C. in the presence of an alkali metal halide flux which is also heated and is separated from the alloying material. As shown in Fig. 1 an n-type silicon body is placed in a recess of a graphite body 2 and a eutectic mixture of NaF and NaCl is placed in recess 6. A pellet 8 is placed on the silicon body 5, a graphite cover plate 3 is placed in position and the assembly is heated to 750 DEG C. in hydrogen to form a p-n type junction. Lead or bismuth may also be used as the alloying material.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL260812 | 1961-02-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB984141A true GB984141A (en) | 1965-02-24 |
Family
ID=19752857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3664/62A Expired GB984141A (en) | 1961-02-03 | 1962-01-31 | Improvements in or relating to methods of alloying to semiconductor bodies |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3230609A (en) |
| DE (1) | DE1154576B (en) |
| GB (1) | GB984141A (en) |
| NL (1) | NL260812A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4183126A (en) * | 1976-09-09 | 1980-01-15 | Kabushiki Kaisha Seikosha | Process for preparing quartz oscillator |
| US4298154A (en) * | 1980-01-14 | 1981-11-03 | B. B. Greenberg Company | Automatic soldering machine |
| US20040144999A1 (en) * | 1995-06-07 | 2004-07-29 | Li Chou H. | Integrated circuit device |
| US7118942B1 (en) | 2000-09-27 | 2006-10-10 | Li Chou H | Method of making atomic integrated circuit device |
| US20100276733A1 (en) * | 2000-09-27 | 2010-11-04 | Li Choa H | Solid-state circuit device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2299166A (en) * | 1940-07-30 | 1942-10-20 | Aluminum Co Of America | Brazing light metals |
| US2561565A (en) * | 1946-06-22 | 1951-07-24 | United Aircraft Corp | Process of fluxing and joining metal parts |
| US2674790A (en) * | 1950-04-15 | 1954-04-13 | United Aircraft Corp | Method of soldering aluminous metal parts by treating with chloride fluxes |
| NL92060C (en) * | 1953-10-26 | |||
| US2800711A (en) * | 1954-08-18 | 1957-07-30 | Wall Colmonoy Corp | Brazing method |
| US2996800A (en) * | 1956-11-28 | 1961-08-22 | Texas Instruments Inc | Method of making ohmic connections to silicon semiconductors |
| NL106425C (en) * | 1958-01-14 | |||
| US3015591A (en) * | 1958-07-18 | 1962-01-02 | Itt | Semi-conductor rectifiers and method of manufacture |
| NL108505C (en) * | 1958-09-05 |
-
0
- NL NL260812D patent/NL260812A/xx unknown
-
1962
- 1962-01-30 DE DEN21137A patent/DE1154576B/en active Pending
- 1962-01-30 US US169819A patent/US3230609A/en not_active Expired - Lifetime
- 1962-01-31 GB GB3664/62A patent/GB984141A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1154576B (en) | 1963-09-19 |
| US3230609A (en) | 1966-01-25 |
| NL260812A (en) |
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