GB864239A - A process for providing a semi-conductor body with a metal electrode - Google Patents

A process for providing a semi-conductor body with a metal electrode

Info

Publication number
GB864239A
GB864239A GB140760A GB140760A GB864239A GB 864239 A GB864239 A GB 864239A GB 140760 A GB140760 A GB 140760A GB 140760 A GB140760 A GB 140760A GB 864239 A GB864239 A GB 864239A
Authority
GB
United Kingdom
Prior art keywords
semi
providing
eutectic
metal electrode
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB140760A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB864239A publication Critical patent/GB864239A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material

Abstract

864,239. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Jan. 14, 1960 [Jan. 17, 1959], No. 1407/60: Class 37. In providing an alloy electrode on a semiconductor body, the rate of temperature rise during the heating process is reduced immediately before the eutectic temperature of the electrode and semi-conductor is reached. This allows for solid diffusion to provide a larger region consisting of eutectic composition so that when the eutectic temperature is reached the larger region of substantially uniform composition is melted. The process may be applied to a gold foil alloyed to a silicon body, the eutectic temperature then being about 370‹ C. Impurities may be included in the gold.
GB140760A 1959-01-17 1960-01-14 A process for providing a semi-conductor body with a metal electrode Expired GB864239A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES61374A DE1101627B (en) 1959-01-17 1959-01-17 Process for the production of semiconductor arrangements with at least one alloyed electrode

Publications (1)

Publication Number Publication Date
GB864239A true GB864239A (en) 1961-03-29

Family

ID=7494807

Family Applications (1)

Application Number Title Priority Date Filing Date
GB140760A Expired GB864239A (en) 1959-01-17 1960-01-14 A process for providing a semi-conductor body with a metal electrode

Country Status (5)

Country Link
CH (1) CH383504A (en)
DE (1) DE1101627B (en)
FR (1) FR1242004A (en)
GB (1) GB864239A (en)
NL (1) NL245806A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2606551B1 (en) * 1986-11-07 1989-03-10 Arnaud D Avitaya Francois PROCESS FOR FORMING OHMIC CONTACTS ON SILICON

Also Published As

Publication number Publication date
NL245806A (en)
FR1242004A (en) 1960-09-23
DE1101627B (en) 1961-03-09
CH383504A (en) 1964-10-31

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