FR1242004A - Method of manufacturing semiconductor electronic devices comprising at least one metal electrode fixed by alloy - Google Patents

Method of manufacturing semiconductor electronic devices comprising at least one metal electrode fixed by alloy

Info

Publication number
FR1242004A
FR1242004A FR810818A FR810818A FR1242004A FR 1242004 A FR1242004 A FR 1242004A FR 810818 A FR810818 A FR 810818A FR 810818 A FR810818 A FR 810818A FR 1242004 A FR1242004 A FR 1242004A
Authority
FR
France
Prior art keywords
alloy
electronic devices
metal electrode
manufacturing semiconductor
electrode fixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR810818A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1242004A publication Critical patent/FR1242004A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
FR810818A 1959-01-17 1959-11-20 Method of manufacturing semiconductor electronic devices comprising at least one metal electrode fixed by alloy Expired FR1242004A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES61374A DE1101627B (en) 1959-01-17 1959-01-17 Process for the production of semiconductor arrangements with at least one alloyed electrode

Publications (1)

Publication Number Publication Date
FR1242004A true FR1242004A (en) 1960-09-23

Family

ID=7494807

Family Applications (1)

Application Number Title Priority Date Filing Date
FR810818A Expired FR1242004A (en) 1959-01-17 1959-11-20 Method of manufacturing semiconductor electronic devices comprising at least one metal electrode fixed by alloy

Country Status (5)

Country Link
CH (1) CH383504A (en)
DE (1) DE1101627B (en)
FR (1) FR1242004A (en)
GB (1) GB864239A (en)
NL (1) NL245806A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2606551B1 (en) * 1986-11-07 1989-03-10 Arnaud D Avitaya Francois PROCESS FOR FORMING OHMIC CONTACTS ON SILICON

Also Published As

Publication number Publication date
NL245806A (en)
DE1101627B (en) 1961-03-09
CH383504A (en) 1964-10-31
GB864239A (en) 1961-03-29

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