FR1262078A - Method of manufacturing transistors, of the alloy type, for high frequencies - Google Patents
Method of manufacturing transistors, of the alloy type, for high frequenciesInfo
- Publication number
- FR1262078A FR1262078A FR826033A FR826033A FR1262078A FR 1262078 A FR1262078 A FR 1262078A FR 826033 A FR826033 A FR 826033A FR 826033 A FR826033 A FR 826033A FR 1262078 A FR1262078 A FR 1262078A
- Authority
- FR
- France
- Prior art keywords
- high frequencies
- alloy type
- manufacturing transistors
- transistors
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000956 alloy Substances 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR826033A FR1262078A (en) | 1959-05-06 | 1960-05-03 | Method of manufacturing transistors, of the alloy type, for high frequencies |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1399859 | 1959-05-06 | ||
FR826033A FR1262078A (en) | 1959-05-06 | 1960-05-03 | Method of manufacturing transistors, of the alloy type, for high frequencies |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1262078A true FR1262078A (en) | 1961-05-26 |
Family
ID=26185860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR826033A Expired FR1262078A (en) | 1959-05-06 | 1960-05-03 | Method of manufacturing transistors, of the alloy type, for high frequencies |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1262078A (en) |
-
1960
- 1960-05-03 FR FR826033A patent/FR1262078A/en not_active Expired
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1188486A (en) | Process and apparatus for the manufacture of elastic metal cables, and cables thus obtained | |
FR1247060A (en) | Process for manufacturing an epoxypolybutadiene and epoxypolybutadienes obtained by this process | |
FR1249559A (en) | Process for manufacturing resins of the epoxy-polyglycidyl ethers type | |
FR1229343A (en) | Metal-polymer compositions, process for their manufacture, and their applications | |
BE588736A (en) | Process for the manufacture of alkalamine halides. | |
FR1262078A (en) | Method of manufacturing transistors, of the alloy type, for high frequencies | |
BE574808A (en) | Magnetic circuits for coils of self-transformers and the like, their manufacturing process and apparatus equipped with such magnetic circuits | |
BE591987A (en) | Process for manufacturing cyclopropanes. | |
BE598094A (en) | Process for the manufacture of cyclohexanone. | |
BE595407A (en) | Process for the manufacture of cyclotrimethylenetrinitramine. | |
BE593539A (en) | Process for the manufacture of N-Dialcoyl- and N-Diaralcoylphosphorylhomocystérnothiolactones | |
BE590461A (en) | Process for manufacturing uranium metal. | |
FR1262075A (en) | Process for the manufacture of lead-tetramethyl | |
FR1269229A (en) | Process for the production of sieves | |
OA03423A (en) | Manufacturing process for fluted ingots. | |
FR1250930A (en) | Process for the manufacture of cyclo-dodecatrienes- (1, 5, 9) | |
FR1239506A (en) | Process for the manufacture of sulfamethylpyrimidine | |
BE600876A (en) | Manufacturing process of beta-caro. | |
BE591512A (en) | Machine and process for the cold manufacture of welded tubes. | |
FR1151291A (en) | Manufacturing process of 1.1-difluoro-1-chloroethane | |
FR1270790A (en) | Method for manufacturing semiconductor elements | |
BE589886A (en) | Continuous process for the manufacture of semiconductors. | |
BE583833R (en) | High purity silicon production method. | |
BE600344A (en) | Improved process for the continuous manufacture of pentaerythritol. | |
FR1227496A (en) | Semiconductors and method for their manufacture, and their applications |