CH383504A - Process for the production of electronic semiconductor devices with an alloyed metal electrode - Google Patents

Process for the production of electronic semiconductor devices with an alloyed metal electrode

Info

Publication number
CH383504A
CH383504A CH10960A CH10960A CH383504A CH 383504 A CH383504 A CH 383504A CH 10960 A CH10960 A CH 10960A CH 10960 A CH10960 A CH 10960A CH 383504 A CH383504 A CH 383504A
Authority
CH
Switzerland
Prior art keywords
production
semiconductor devices
metal electrode
electronic semiconductor
alloyed metal
Prior art date
Application number
CH10960A
Other languages
German (de)
Inventor
Reimer Dipl Phys Emeis
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH383504A publication Critical patent/CH383504A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
CH10960A 1959-01-17 1960-01-04 Process for the production of electronic semiconductor devices with an alloyed metal electrode CH383504A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES61374A DE1101627B (en) 1959-01-17 1959-01-17 Process for the production of semiconductor arrangements with at least one alloyed electrode

Publications (1)

Publication Number Publication Date
CH383504A true CH383504A (en) 1964-10-31

Family

ID=7494807

Family Applications (1)

Application Number Title Priority Date Filing Date
CH10960A CH383504A (en) 1959-01-17 1960-01-04 Process for the production of electronic semiconductor devices with an alloyed metal electrode

Country Status (5)

Country Link
CH (1) CH383504A (en)
DE (1) DE1101627B (en)
FR (1) FR1242004A (en)
GB (1) GB864239A (en)
NL (1) NL245806A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2606551B1 (en) * 1986-11-07 1989-03-10 Arnaud D Avitaya Francois PROCESS FOR FORMING OHMIC CONTACTS ON SILICON

Also Published As

Publication number Publication date
NL245806A (en)
FR1242004A (en) 1960-09-23
DE1101627B (en) 1961-03-09
GB864239A (en) 1961-03-29

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