GB996008A - Improvements in and relating to the manufacture of crystals - Google Patents

Improvements in and relating to the manufacture of crystals

Info

Publication number
GB996008A
GB996008A GB3522561A GB3522561A GB996008A GB 996008 A GB996008 A GB 996008A GB 3522561 A GB3522561 A GB 3522561A GB 3522561 A GB3522561 A GB 3522561A GB 996008 A GB996008 A GB 996008A
Authority
GB
United Kingdom
Prior art keywords
crystal
enclosure member
melt
crystals
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3522561A
Inventor
John Chadwick Brice
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB3522561A priority Critical patent/GB996008A/en
Publication of GB996008A publication Critical patent/GB996008A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

996,008. Crystal-pulling. MULLARD Ltd. Sept. 29, 1961, No. 35225/61. Heading B1S. The presence of scum around a crystal being pulled from a melt is avoided by the use of a floating enclosure member of inert material and a desired impurity is added to the melt outside the enclosure member. The crystal may be of, germanium, gallium telluride, or indium antimonide; and the enclosure member may be of silica. As shown in Fig. 1, a crystal 4 is pulled from a melt 11 on which floats an enclosure member 13 having positioning arms 14 Fig. 2.
GB3522561A 1961-09-29 1961-09-29 Improvements in and relating to the manufacture of crystals Expired GB996008A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3522561A GB996008A (en) 1961-09-29 1961-09-29 Improvements in and relating to the manufacture of crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3522561A GB996008A (en) 1961-09-29 1961-09-29 Improvements in and relating to the manufacture of crystals

Publications (1)

Publication Number Publication Date
GB996008A true GB996008A (en) 1965-06-23

Family

ID=10375294

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3522561A Expired GB996008A (en) 1961-09-29 1961-09-29 Improvements in and relating to the manufacture of crystals

Country Status (1)

Country Link
GB (1) GB996008A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
EP0063837A1 (en) * 1981-04-29 1982-11-03 Koninklijke Philips Electronics N.V. Method of drawing a silicon rod
US4664742A (en) * 1984-05-25 1987-05-12 Kenji Tomizawa Method for growing single crystals of dissociative compounds
US4750969A (en) * 1985-06-27 1988-06-14 Research Development Corporation Of Japan Method for growing single crystals of dissociative compound semiconductor
US5145550A (en) * 1984-02-21 1992-09-08 Sumitomo Electric Industries, Ltd. Process and apparatus for growing single crystals of III-V compound semiconductor
CN105401214A (en) * 2015-11-25 2016-03-16 昆明云锗高新技术有限公司 Germanium melt scum removal method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
EP0063837A1 (en) * 1981-04-29 1982-11-03 Koninklijke Philips Electronics N.V. Method of drawing a silicon rod
US5145550A (en) * 1984-02-21 1992-09-08 Sumitomo Electric Industries, Ltd. Process and apparatus for growing single crystals of III-V compound semiconductor
US4664742A (en) * 1984-05-25 1987-05-12 Kenji Tomizawa Method for growing single crystals of dissociative compounds
US4750969A (en) * 1985-06-27 1988-06-14 Research Development Corporation Of Japan Method for growing single crystals of dissociative compound semiconductor
CN105401214A (en) * 2015-11-25 2016-03-16 昆明云锗高新技术有限公司 Germanium melt scum removal method

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