GB841158A - Improvements in or relating to junction rectifiers or transistors - Google Patents

Improvements in or relating to junction rectifiers or transistors

Info

Publication number
GB841158A
GB841158A GB3301456A GB3301456A GB841158A GB 841158 A GB841158 A GB 841158A GB 3301456 A GB3301456 A GB 3301456A GB 3301456 A GB3301456 A GB 3301456A GB 841158 A GB841158 A GB 841158A
Authority
GB
United Kingdom
Prior art keywords
emitter
electrodes
semi
base
mould
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3301456A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB841158A publication Critical patent/GB841158A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnets (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

841,158. Semi-conductor devices. SIEMENSSCHUCKERTWERKE. A. G. Oct. 29, 1956 [Oct. 29, 1955], No. 33014/56. Class 37. A junction rectifier or transistor comprises a semi-conductor member 1, Figs. 1 and 2, having a collector electrode 2 on one surface and a number of concentric base and emitter electrodes 3-8 on the opposite surface, the alternate concentric electrodes 3, 5, 7 forming an emitter group while the remaining electrodes 4, 6, 8 function as a base group. The semiconductor member may comprise germanium, silicon or a binary compound such as aluminium phosphide, aluminium antimonide or gallium arsenide. In use, the various emitter-base systems may be connected in parallel to form a common emitter and base connection, or they may operate at different control potentials. The rectifier or transistor may be produced by the use of a graphite mould, Fig. 4, comprising upper and lower parts 9, 10 having appropriate recesses into which are fitted pre-shaped metal electrodes and the semi-conductor member. The mould 11, Fig. 6, is mounted in a non- magnetic frame 16 and is housed within a gas filled or evacuated furnace housing 16 on a heated plate 12. During heat treatment the components contained in the mould are subjected to pressure by an iron weight 14 and a spring 15, the pressure being reduced in the course of the alloying process by energising a magnet system comprising a core 17, the weight 14 and an energising coil 18.
GB3301456A 1955-10-29 1956-10-29 Improvements in or relating to junction rectifiers or transistors Expired GB841158A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES46168A DE1167986B (en) 1955-10-29 1955-10-29 Flat transistor with a disk-shaped semiconductor body and with strip-shaped base and emitter electrodes

Publications (1)

Publication Number Publication Date
GB841158A true GB841158A (en) 1960-07-13

Family

ID=7485869

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3301456A Expired GB841158A (en) 1955-10-29 1956-10-29 Improvements in or relating to junction rectifiers or transistors

Country Status (5)

Country Link
CH (1) CH354170A (en)
DE (1) DE1167986B (en)
FR (1) FR1162732A (en)
GB (1) GB841158A (en)
NL (1) NL211758A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115655832A (en) * 2022-12-09 2023-01-31 华芯半导体研究院(北京)有限公司 Compound semiconductor epitaxial wafer Hall sample preparation device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1111298B (en) * 1959-04-28 1961-07-20 Licentia Gmbh Electrically asymmetrically conductive semiconductor arrangement
DE1156508B (en) * 1959-09-30 1963-10-31 Siemens Ag Controllable and switching four-layer semiconductor component

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2677793A (en) * 1948-07-20 1954-05-04 Sylvania Electric Prod Crystal amplifier
DE916084C (en) * 1949-02-11 1954-08-02 Siemens Ag Electrically controllable semiconductor rectifier
NL152375C (en) * 1949-03-31
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
BE520677A (en) * 1950-09-29

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115655832A (en) * 2022-12-09 2023-01-31 华芯半导体研究院(北京)有限公司 Compound semiconductor epitaxial wafer Hall sample preparation device

Also Published As

Publication number Publication date
DE1167986B (en) 1964-04-16
CH354170A (en) 1961-05-15
NL211758A (en)
FR1162732A (en) 1958-09-16

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