NL211758A - - Google Patents

Info

Publication number
NL211758A
NL211758A NL211758DA NL211758A NL 211758 A NL211758 A NL 211758A NL 211758D A NL211758D A NL 211758DA NL 211758 A NL211758 A NL 211758A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL211758A publication Critical patent/NL211758A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
NL211758D 1955-10-29 NL211758A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES46168A DE1167986B (en) 1955-10-29 1955-10-29 Flat transistor with a disk-shaped semiconductor body and with strip-shaped base and emitter electrodes

Publications (1)

Publication Number Publication Date
NL211758A true NL211758A (en)

Family

ID=7485869

Family Applications (1)

Application Number Title Priority Date Filing Date
NL211758D NL211758A (en) 1955-10-29

Country Status (5)

Country Link
CH (1) CH354170A (en)
DE (1) DE1167986B (en)
FR (1) FR1162732A (en)
GB (1) GB841158A (en)
NL (1) NL211758A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1111298B (en) * 1959-04-28 1961-07-20 Licentia Gmbh Electrically asymmetrically conductive semiconductor arrangement
DE1156508B (en) * 1959-09-30 1963-10-31 Siemens Ag Controllable and switching four-layer semiconductor component
CN115655832A (en) * 2022-12-09 2023-01-31 华芯半导体研究院(北京)有限公司 Compound semiconductor epitaxial wafer Hall sample preparation device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2677793A (en) * 1948-07-20 1954-05-04 Sylvania Electric Prod Crystal amplifier
DE916084C (en) * 1949-02-11 1954-08-02 Siemens Ag Electrically controllable semiconductor rectifier
US2734102A (en) * 1949-03-31 1956-02-07 Jacques i
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
BE520677A (en) * 1950-09-29

Also Published As

Publication number Publication date
CH354170A (en) 1961-05-15
GB841158A (en) 1960-07-13
DE1167986B (en) 1964-04-16
FR1162732A (en) 1958-09-16

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