GB820903A - Semiconductor diode - Google Patents
Semiconductor diodeInfo
- Publication number
- GB820903A GB820903A GB463/57A GB46357A GB820903A GB 820903 A GB820903 A GB 820903A GB 463/57 A GB463/57 A GB 463/57A GB 46357 A GB46357 A GB 46357A GB 820903 A GB820903 A GB 820903A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor
- jan
- regions
- zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000013078 crystal Substances 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical compound NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 abstract 1
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- XEPNJJFNSJKTSO-UHFFFAOYSA-N azanium;zinc;chloride Chemical compound [NH4+].[Cl-].[Zn] XEPNJJFNSJKTSO-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thyristors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
820,903. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Jan. 4, 1957 [Jan. 9, 1956], No. 463/57. Class 37. A negative resistance semi-conductor junction diode comprises an NPNP body, the two intermediate zones 4, 5 having a thickness substantially less than the diffusion length, and each being free of any electrical connection except those to its adjacent semi-conductor zones. The voltage/current characteristic of the device has high and low current regions allowing for pulse switching operation. The resistivity of the end regions must not be less than that of the intermediate regions. A crystal growing process for pulling a germanium crystal doped successively with antimony and gallium is described. The semi-conductor may also consist of silicon or aluminium antimonide. Leads may be attached to the device utilizing a flux of ammonium zinc chloride. The theoretical aspect of the invention is discussed.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US820903XA | 1956-01-09 | 1956-01-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB820903A true GB820903A (en) | 1959-09-30 |
Family
ID=22169005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB463/57A Expired GB820903A (en) | 1956-01-09 | 1957-01-04 | Semiconductor diode |
Country Status (3)
Country | Link |
---|---|
BE (1) | BE554033A (en) |
DE (1) | DE1080692B (en) |
GB (1) | GB820903A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1180849B (en) * | 1959-12-30 | 1964-11-05 | Ibm | Semiconductor component with a sequence of zones of alternately opposite conductivity types in the semiconductor body and method for producing such a semiconductor component |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2997604A (en) * | 1959-01-14 | 1961-08-22 | Shockley William | Semiconductive device and method of operating same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE926378C (en) * | 1948-10-02 | 1955-04-14 | Licentia Gmbh | Electrically asymmetrically conductive system, in particular dry rectifier, with a sequence of semiconductor layers |
DE1048359B (en) * | 1952-07-22 | |||
NL178164C (en) * | 1953-05-07 | Squibb & Sons Inc | PROCESS FOR PREPARING C.Q. MANUFACTURE OF A PHARMACEUTICAL PREPARATION WITH BLOOD PRESSURE REDUCING ACTION AND PROCEDURE FOR PREPARING A COMPOUND SUITABLE FOR USE IN THE SAID PROCEDURE. |
-
0
- BE BE554033D patent/BE554033A/xx unknown
-
1957
- 1957-01-04 GB GB463/57A patent/GB820903A/en not_active Expired
- 1957-01-08 DE DEI12673A patent/DE1080692B/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1180849B (en) * | 1959-12-30 | 1964-11-05 | Ibm | Semiconductor component with a sequence of zones of alternately opposite conductivity types in the semiconductor body and method for producing such a semiconductor component |
Also Published As
Publication number | Publication date |
---|---|
BE554033A (en) | |
DE1080692B (en) | 1960-04-28 |
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