GB1024166A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- GB1024166A GB1024166A GB51338/63A GB5133863A GB1024166A GB 1024166 A GB1024166 A GB 1024166A GB 51338/63 A GB51338/63 A GB 51338/63A GB 5133863 A GB5133863 A GB 5133863A GB 1024166 A GB1024166 A GB 1024166A
- Authority
- GB
- United Kingdom
- Prior art keywords
- base
- silicon
- emitter
- relating
- contacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
1,024,166. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Dec. 31, 1963, No. 51338/63. Heading H1K. A silicon planar transistor comprises interdigitated emitter and base contacts of specified dimensions and, as shown in Fig. 1, the emitter 9 and base 1 contacts consisting of aluminium applied to N and P regions respectively which have been provided by diffusion into an N-type epitaxially deposited layer of silicon on a low resistivity substrate. The PN junctions are covered with silicon oxide at the surface and a gold wire is ball bonded on to the base contact area.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB51338/63A GB1024166A (en) | 1963-12-31 | 1963-12-31 | Improvements in or relating to semiconductor devices |
DEST23081A DE1293906B (en) | 1963-12-31 | 1964-12-15 | Silicon planar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB51338/63A GB1024166A (en) | 1963-12-31 | 1963-12-31 | Improvements in or relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1024166A true GB1024166A (en) | 1966-03-30 |
Family
ID=10459611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB51338/63A Expired GB1024166A (en) | 1963-12-31 | 1963-12-31 | Improvements in or relating to semiconductor devices |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE1293906B (en) |
GB (1) | GB1024166A (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3083441A (en) * | 1959-04-13 | 1963-04-02 | Texas Instruments Inc | Method for fabricating transistors |
FR1335510A (en) * | 1960-09-09 | 1963-08-23 | Texas Instruments Inc | Silicon transistors for high currents |
FR1301563A (en) * | 1960-09-21 | 1962-08-17 | Ass Elect Ind | Improvements to dielectric devices |
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1963
- 1963-12-31 GB GB51338/63A patent/GB1024166A/en not_active Expired
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1964
- 1964-12-15 DE DEST23081A patent/DE1293906B/en active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1293906B (en) | 1969-04-30 |
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