GB1503545A - Electroluminescent semiconductor devices and their manufacture - Google Patents
Electroluminescent semiconductor devices and their manufactureInfo
- Publication number
- GB1503545A GB1503545A GB24621/75A GB2462175A GB1503545A GB 1503545 A GB1503545 A GB 1503545A GB 24621/75 A GB24621/75 A GB 24621/75A GB 2462175 A GB2462175 A GB 2462175A GB 1503545 A GB1503545 A GB 1503545A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- semi
- doped region
- conductor
- june
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910003437 indium oxide Inorganic materials 0.000 abstract 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910000416 bismuth oxide Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
1503545 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 9 June 1975 [12 June 1974] 24621/75 Heading H1K An electroluminescent semi-conductor device has a monocrystalline semi-conductor body 1 of a III-V compound and comprises a doped region 2 which forms a PN junction 4 with an adjacent region 3, and a tin-doped indium oxide current conducting layer 5 whose sheet resistance is at most one third that of the doped region 2. The layer 5 forms a transparent electrode on a silicon oxide or nitride layer 6 and in an aperture 7 therein. A gold wire 9 is contacted with a bismuth oxide layer on the indium oxide layer 5 by thermocompression bonding. In an alternative embodiment the doped region 2 extends over the entire surface of the semiconductor body 1.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7407812A NL7407812A (en) | 1974-06-12 | 1974-06-12 | ELECTROLUMINESCATING SEMICONDUCTOR. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1503545A true GB1503545A (en) | 1978-03-15 |
Family
ID=19821526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB24621/75A Expired GB1503545A (en) | 1974-06-12 | 1975-06-09 | Electroluminescent semiconductor devices and their manufacture |
Country Status (9)
| Country | Link |
|---|---|
| JP (2) | JPS5111388A (en) |
| AU (1) | AU498171B2 (en) |
| CA (1) | CA1030643A (en) |
| CH (1) | CH588168A5 (en) |
| DE (1) | DE2523963A1 (en) |
| FR (1) | FR2275031A1 (en) |
| GB (1) | GB1503545A (en) |
| IT (1) | IT1038801B (en) |
| NL (1) | NL7407812A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003051216A (en) * | 2001-08-07 | 2003-02-21 | Furukawa Electric Co Ltd:The | Ocean basin laying lengthy body |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5136875B2 (en) * | 1971-11-02 | 1976-10-12 |
-
1973
- 1973-06-11 AU AU82009/75A patent/AU498171B2/en not_active Expired
-
1974
- 1974-06-12 NL NL7407812A patent/NL7407812A/en not_active Application Discontinuation
-
1975
- 1975-05-30 DE DE19752523963 patent/DE2523963A1/en active Pending
- 1975-06-09 CH CH741975A patent/CH588168A5/xx not_active IP Right Cessation
- 1975-06-09 IT IT24152/75A patent/IT1038801B/en active
- 1975-06-09 GB GB24621/75A patent/GB1503545A/en not_active Expired
- 1975-06-11 CA CA229,065A patent/CA1030643A/en not_active Expired
- 1975-06-11 JP JP7072075A patent/JPS5111388A/ja active Pending
- 1975-06-12 FR FR7518364A patent/FR2275031A1/en active Granted
-
1978
- 1978-02-06 JP JP1978012720U patent/JPS53119872U/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| AU8200975A (en) | 1976-12-16 |
| CA1030643A (en) | 1978-05-02 |
| FR2275031B1 (en) | 1978-10-27 |
| NL7407812A (en) | 1975-12-16 |
| AU498171B2 (en) | 1979-02-15 |
| JPS53119872U (en) | 1978-09-22 |
| DE2523963A1 (en) | 1976-01-02 |
| IT1038801B (en) | 1979-11-30 |
| FR2275031A1 (en) | 1976-01-09 |
| CH588168A5 (en) | 1977-05-31 |
| JPS5111388A (en) | 1976-01-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |