JPS57157558A - Complementary mis integrated circuit device - Google Patents

Complementary mis integrated circuit device

Info

Publication number
JPS57157558A
JPS57157558A JP56042213A JP4221381A JPS57157558A JP S57157558 A JPS57157558 A JP S57157558A JP 56042213 A JP56042213 A JP 56042213A JP 4221381 A JP4221381 A JP 4221381A JP S57157558 A JPS57157558 A JP S57157558A
Authority
JP
Japan
Prior art keywords
type
channel
source
mis
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56042213A
Other languages
Japanese (ja)
Other versions
JPS649737B2 (en
Inventor
Kensaku Wada
Koichi Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56042213A priority Critical patent/JPS57157558A/en
Publication of JPS57157558A publication Critical patent/JPS57157558A/en
Publication of JPS649737B2 publication Critical patent/JPS649737B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent a latch-up of a C-MIS IC device due to the noise from a power sounrce and to the rise of a power source voltage by providing a constant-voltage circuit in parallel with a conductive type MIS transistor nd reversely conductive type MIS transistor between high voltage source and a low voltage source of the C-MIS IC. CONSTITUTION:An inverter circuit having a P channel MIS element TP and an n channel MIS element TN is provided between a high voltage source VDD and a low volage source VSS, and a constant-voltage circuit using a zener diode ZD is provided in parallel with the inverter circuit between the voltage souces VDD and VSS. That is, a P type well region is diffused in an N<-> type semiconductor substrate, an N<+> type region 1 is formed at the end of the well region to form a zener diode, N<+> type source and drain regions 3, 5 sandwiching a channel region 4 are provided around P<+> type guard rings 2, 6 in the same well region, thereby forming an N channel element. Similarly, P<+> type source and drain regions 8, 10 sandwiching N<+> type guard rings 7, 10 and channel 9 are formed in a substrate having no well region, thereby forming a P channel element.
JP56042213A 1981-03-23 1981-03-23 Complementary mis integrated circuit device Granted JPS57157558A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56042213A JPS57157558A (en) 1981-03-23 1981-03-23 Complementary mis integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56042213A JPS57157558A (en) 1981-03-23 1981-03-23 Complementary mis integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57157558A true JPS57157558A (en) 1982-09-29
JPS649737B2 JPS649737B2 (en) 1989-02-20

Family

ID=12629749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56042213A Granted JPS57157558A (en) 1981-03-23 1981-03-23 Complementary mis integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57157558A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925261A (en) * 1982-08-02 1984-02-09 Hitachi Ltd Cmos fet integrated circuit device
JPH01155655A (en) * 1987-12-14 1989-06-19 Hitachi Ltd Semiconductor integrated circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146188A (en) * 1975-06-11 1976-12-15 Fujitsu Ltd Diode device
JPS5499584A (en) * 1977-12-20 1979-08-06 Citizen Watch Co Ltd Silicon gate complementary mos integrated circuit
JPS5587391A (en) * 1978-12-22 1980-07-02 Hitachi Ltd Semiconductor memory circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146188A (en) * 1975-06-11 1976-12-15 Fujitsu Ltd Diode device
JPS5499584A (en) * 1977-12-20 1979-08-06 Citizen Watch Co Ltd Silicon gate complementary mos integrated circuit
JPS5587391A (en) * 1978-12-22 1980-07-02 Hitachi Ltd Semiconductor memory circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925261A (en) * 1982-08-02 1984-02-09 Hitachi Ltd Cmos fet integrated circuit device
JPH0241176B2 (en) * 1982-08-02 1990-09-14 Hitachi Ltd
JPH01155655A (en) * 1987-12-14 1989-06-19 Hitachi Ltd Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS649737B2 (en) 1989-02-20

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