JPS55123172A - Schottky-barrier-gate field-effect transistor - Google Patents

Schottky-barrier-gate field-effect transistor

Info

Publication number
JPS55123172A
JPS55123172A JP3024279A JP3024279A JPS55123172A JP S55123172 A JPS55123172 A JP S55123172A JP 3024279 A JP3024279 A JP 3024279A JP 3024279 A JP3024279 A JP 3024279A JP S55123172 A JPS55123172 A JP S55123172A
Authority
JP
Japan
Prior art keywords
schottky
barrier
neighborhood
substrate
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3024279A
Other languages
Japanese (ja)
Inventor
Makoto Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3024279A priority Critical patent/JPS55123172A/en
Publication of JPS55123172A publication Critical patent/JPS55123172A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To increase gate voltage resistance, by increasing the carrier density in the semiconductor layer gradually from the surface toward the substrate, when a Schottky-barrier-gate FET is formed by providing a semiconductor layer on a semi- insulator substrate. CONSTITUTION:n-type GaAs thin film 2 if grown on semi-insulator substrate 1. Schottky-barrier-gate electrode 3 is formed on its center surface, and on both sides surrounding this and at an interval, source and drain regions 4 and 5 are formed, and thereby a MESFET is constructed. In this structure, the carrier density in layer 2 is not made uniform, but its distribution is made to increase in the direction of increasing thickness: when the thickness of layer 2 is 0.2-0.5mum, the absolute value of the density is 1-8X10<16>atoms/cm<3> in the neighborhood of the surface, and 1X10<17>atoms/cm<3> in the neighborhood of the boundary of substrate 1. In this way, since the density in the neighborhood of the surface is lowered, the electric field here is lowered. consequently, the gate voltage resistance is improved to 15- 20V compared to about 10V in the conventional devices.
JP3024279A 1979-03-15 1979-03-15 Schottky-barrier-gate field-effect transistor Pending JPS55123172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3024279A JPS55123172A (en) 1979-03-15 1979-03-15 Schottky-barrier-gate field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3024279A JPS55123172A (en) 1979-03-15 1979-03-15 Schottky-barrier-gate field-effect transistor

Publications (1)

Publication Number Publication Date
JPS55123172A true JPS55123172A (en) 1980-09-22

Family

ID=12298232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3024279A Pending JPS55123172A (en) 1979-03-15 1979-03-15 Schottky-barrier-gate field-effect transistor

Country Status (1)

Country Link
JP (1) JPS55123172A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6476774A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551122A (en) * 1978-06-16 1980-01-07 Mitsubishi Electric Corp Field-effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551122A (en) * 1978-06-16 1980-01-07 Mitsubishi Electric Corp Field-effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6476774A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor device

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