JPS5586172A - Manufacture of semiconductor pickup device - Google Patents

Manufacture of semiconductor pickup device

Info

Publication number
JPS5586172A
JPS5586172A JP16086478A JP16086478A JPS5586172A JP S5586172 A JPS5586172 A JP S5586172A JP 16086478 A JP16086478 A JP 16086478A JP 16086478 A JP16086478 A JP 16086478A JP S5586172 A JPS5586172 A JP S5586172A
Authority
JP
Japan
Prior art keywords
electrode
insulating film
film
sio
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16086478A
Other languages
Japanese (ja)
Inventor
Toru Maekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16086478A priority Critical patent/JPS5586172A/en
Publication of JPS5586172A publication Critical patent/JPS5586172A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE: To improve pickup efficiency and make uniform pickup performance for each picture element by providing a thin film part and a thick film part in a photo gate electrode.
CONSTITUTION: After insulating film IF1 consisting of SiO2 film has been coated on the upper surface of semiconductor substrate SUB, poly Si, which is to become light-transmitting photo gate electrode Ep, is fitted on it. Next, by heat-oxidizing substrate SUB, insulating film IF3 is formed on it including the upper surface of electrode Ep. Subsequently, after coating the entire surface of insulating film IF3 with poly Si, transfer gate electrodes TG1 and TG2 are formed by patternizing on the sides of electrode Ep. Next, a part of the oxide film lying on electrode Ep is removed and a part D of electrode Ep is exposed. By operating heat oxidization again, insulating film IF4 consisting of SiO2 is formed on the upper surface of electrode Ep, TG1 and TG2. As a result, thick film part Ep2 and thin film part Ep1 are formed in electrode Ep.
COPYRIGHT: (C)1980,JPO&Japio
JP16086478A 1978-12-22 1978-12-22 Manufacture of semiconductor pickup device Pending JPS5586172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16086478A JPS5586172A (en) 1978-12-22 1978-12-22 Manufacture of semiconductor pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16086478A JPS5586172A (en) 1978-12-22 1978-12-22 Manufacture of semiconductor pickup device

Publications (1)

Publication Number Publication Date
JPS5586172A true JPS5586172A (en) 1980-06-28

Family

ID=15724017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16086478A Pending JPS5586172A (en) 1978-12-22 1978-12-22 Manufacture of semiconductor pickup device

Country Status (1)

Country Link
JP (1) JPS5586172A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01227470A (en) * 1988-03-08 1989-09-11 Toshiba Corp Solid-state image sensing device
JPH01268164A (en) * 1988-04-20 1989-10-25 Toshiba Corp Solid-state image sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01227470A (en) * 1988-03-08 1989-09-11 Toshiba Corp Solid-state image sensing device
JPH01268164A (en) * 1988-04-20 1989-10-25 Toshiba Corp Solid-state image sensor

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