JPS6334928A - Formation of through hole - Google Patents

Formation of through hole

Info

Publication number
JPS6334928A
JPS6334928A JP17951786A JP17951786A JPS6334928A JP S6334928 A JPS6334928 A JP S6334928A JP 17951786 A JP17951786 A JP 17951786A JP 17951786 A JP17951786 A JP 17951786A JP S6334928 A JPS6334928 A JP S6334928A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
hole
film
form
formed
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17951786A
Inventor
Koji Aono
Yukio Higaki
Koichi Sumiya
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To substantially uniformize the thickness of a wiring metal to be formed on a through hole on the side of the hole by forming an insulating film having a faster etching rate than the insulating film of a lower layer on an upper layer, and etching the side of the insulating film in a tapered shape to form the hole.
CONSTITUTION: A wiring metal 2 and an insulting film 3 are formed on a semiconductor substrate 1 to form an insulating film 9 having a faster etching rate than the film 3. After the film 9 is coated with a photoresist 4, a mask pattern for forming a through hole is transferred to the photoresist 4 to form a resist hole 5. With the resist pattern formed with the hole 5 as a mask it is wet etched, the film 3 having slow etching rate is then wet etched to form a through hole 6 with a taper having a small step. After the resist pattern is removed, a wiring metal 7 is formed. Thus, the thickness of the metal 7 on the side of the hole is uniformized like a stepwise part 10.
COPYRIGHT: (C)1988,JPO&Japio
JP17951786A 1986-07-29 1986-07-29 Formation of through hole Pending JPS6334928A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17951786A JPS6334928A (en) 1986-07-29 1986-07-29 Formation of through hole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17951786A JPS6334928A (en) 1986-07-29 1986-07-29 Formation of through hole

Publications (1)

Publication Number Publication Date
JPS6334928A true true JPS6334928A (en) 1988-02-15

Family

ID=16067168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17951786A Pending JPS6334928A (en) 1986-07-29 1986-07-29 Formation of through hole

Country Status (1)

Country Link
JP (1) JPS6334928A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008147692A (en) * 1995-11-27 2008-06-26 Semiconductor Energy Lab Co Ltd Semiconductor device
WO2017152502A1 (en) * 2016-03-09 2017-09-14 京东方科技集团股份有限公司 Array substrate and preparation method therefor and display panel

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100731A (en) * 1980-12-15 1982-06-23 Nec Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100731A (en) * 1980-12-15 1982-06-23 Nec Corp Manufacture of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008147692A (en) * 1995-11-27 2008-06-26 Semiconductor Energy Lab Co Ltd Semiconductor device
US7786553B1 (en) 1995-11-27 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US7800235B2 (en) 1995-11-27 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
JP2010272883A (en) * 1995-11-27 2010-12-02 Semiconductor Energy Lab Co Ltd Semiconductor device, and method of fabricating the same
JP2011238956A (en) * 1995-11-27 2011-11-24 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2012119707A (en) * 1995-11-27 2012-06-21 Semiconductor Energy Lab Co Ltd Semiconductor device
WO2017152502A1 (en) * 2016-03-09 2017-09-14 京东方科技集团股份有限公司 Array substrate and preparation method therefor and display panel

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