JPS5759355A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5759355A
JPS5759355A JP13380080A JP13380080A JPS5759355A JP S5759355 A JPS5759355 A JP S5759355A JP 13380080 A JP13380080 A JP 13380080A JP 13380080 A JP13380080 A JP 13380080A JP S5759355 A JPS5759355 A JP S5759355A
Authority
JP
Japan
Prior art keywords
wiring
ions
upper layer
shoulder section
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13380080A
Other languages
Japanese (ja)
Other versions
JPS6410096B2 (en
Inventor
Junji Sakurai
Naomichi Abe
Koichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13380080A priority Critical patent/JPS5759355A/en
Publication of JPS5759355A publication Critical patent/JPS5759355A/en
Publication of JPS6410096B2 publication Critical patent/JPS6410096B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the disconnection of an upper layer wiring body by smoothly molding a shoulder section of a lower layer wiring body in multilayer wiring formed on a semiconductor substrate. CONSTITUTION:A metallic film 3 in aluminum, etc, is shaped onto a silicon dioxide film 2 coating the silicon substrate 1, and a wiring pattern 3' having high accuracy is formed through reactive-ionic-etching while using a photo-resist pattern 4 as a mask. When the whole surface of the silicon substrate to which the wiring pattern is shaped is etched by ions 5 using an inert gas, the shoulder section 6 is deformed and smoothed due to a shock of the ions. The upper layer aluminum wiring 7 and an insulating film 8 in phosphorus silicate glass, etc. are formed through a normal process.
JP13380080A 1980-09-26 1980-09-26 Manufacture of semiconductor device Granted JPS5759355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13380080A JPS5759355A (en) 1980-09-26 1980-09-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13380080A JPS5759355A (en) 1980-09-26 1980-09-26 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5759355A true JPS5759355A (en) 1982-04-09
JPS6410096B2 JPS6410096B2 (en) 1989-02-21

Family

ID=15113316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13380080A Granted JPS5759355A (en) 1980-09-26 1980-09-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5759355A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569708A (en) * 1984-07-16 1986-02-11 Shinko Kosen Kogyo Kabushiki Kaisha Method for covering cables with sheaths for corrosion protection and/or aesthetics
JPS6280626A (en) * 1985-10-04 1987-04-14 Hosiden Electronics Co Ltd Liquid crystal display element
JPS6281065A (en) * 1985-10-04 1987-04-14 Hosiden Electronics Co Ltd Thin film transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53100785A (en) * 1977-02-15 1978-09-02 Philips Nv Device and method of producing same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53100785A (en) * 1977-02-15 1978-09-02 Philips Nv Device and method of producing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569708A (en) * 1984-07-16 1986-02-11 Shinko Kosen Kogyo Kabushiki Kaisha Method for covering cables with sheaths for corrosion protection and/or aesthetics
JPS6280626A (en) * 1985-10-04 1987-04-14 Hosiden Electronics Co Ltd Liquid crystal display element
JPS6281065A (en) * 1985-10-04 1987-04-14 Hosiden Electronics Co Ltd Thin film transistor

Also Published As

Publication number Publication date
JPS6410096B2 (en) 1989-02-21

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