JPS577945A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS577945A
JPS577945A JP8239680A JP8239680A JPS577945A JP S577945 A JPS577945 A JP S577945A JP 8239680 A JP8239680 A JP 8239680A JP 8239680 A JP8239680 A JP 8239680A JP S577945 A JPS577945 A JP S577945A
Authority
JP
Japan
Prior art keywords
layer
film
wiring
stage section
psg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8239680A
Other languages
Japanese (ja)
Other versions
JPS6146054B2 (en
Inventor
Makoto Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8239680A priority Critical patent/JPS577945A/en
Publication of JPS577945A publication Critical patent/JPS577945A/en
Publication of JPS6146054B2 publication Critical patent/JPS6146054B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the disconnection of the second layer wiring by smoothing the shape of a stage section of a phosphorus silicate glass (PSG) film of a layer insulating film in multilayer wiring structure. CONSTITUTION:The first layer wiring 3 in Al is formed on the insulating film 2 covering the surface of a semiconductor substrate 1 into which an element is made up. The PSG film 4 is built up on the wiring 3. A stage section 4' corresponding to the stage section of the first layer wiring 3 is built up at that time. Ions are injected onto the PSG film 4 from the direction vertical to the surface of the substrate, and a damage layer 5 is formed on the surface. The stage section of the PSG film 4 is made a gently inclined shape by etching the damage layer 5 by using an etching agent of hydrogen fluoride. The second layer wiring 6 is made up on the PSG film 4. Accordingly, the danger of the disconnection of the second layer wiring is removed.
JP8239680A 1980-06-18 1980-06-18 Manufacture of semiconductor device Granted JPS577945A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8239680A JPS577945A (en) 1980-06-18 1980-06-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8239680A JPS577945A (en) 1980-06-18 1980-06-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS577945A true JPS577945A (en) 1982-01-16
JPS6146054B2 JPS6146054B2 (en) 1986-10-11

Family

ID=13773420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8239680A Granted JPS577945A (en) 1980-06-18 1980-06-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS577945A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50110284A (en) * 1974-02-06 1975-08-30
JPS54142981A (en) * 1978-04-27 1979-11-07 Matsushita Electric Ind Co Ltd Manufacture of insulation gate type semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50110284A (en) * 1974-02-06 1975-08-30
JPS54142981A (en) * 1978-04-27 1979-11-07 Matsushita Electric Ind Co Ltd Manufacture of insulation gate type semiconductor device

Also Published As

Publication number Publication date
JPS6146054B2 (en) 1986-10-11

Similar Documents

Publication Publication Date Title
JPS57126147A (en) Manufacture of semiconductor device
EP0177105A3 (en) Method for providing a semiconductor device with planarized contacts
IE822564L (en) Fabrication a semiconductor device having a phosphosilicate glass layer
JPS5772321A (en) Manufacture of seiconductor device
JPS5759359A (en) Manufacture of semiconductor device
JPS577945A (en) Manufacture of semiconductor device
JPS5513904A (en) Semiconductor device and its manufacturing method
JPS56125855A (en) Manufacture of semiconductor device
JPS5759355A (en) Manufacture of semiconductor device
JPS5595338A (en) Integrated circuit
JPS5750451A (en) Semiconductor
JPS56165339A (en) Semiconductor device
JPS575329A (en) Manufacture of semiconductor device
JPS57184232A (en) Manufacture of semiconductor device
JPS56130951A (en) Manufacture of semiconductor device
JPS5759357A (en) Forming method for structure of multilayer wiring
JPS5519880A (en) Manufacturing method of semiconductor device
JPS5797643A (en) Manufacture of semiconductor device
JPS5512705A (en) Processing method of electrode wiring
JPS5740968A (en) Semiconductor device
JPS56134733A (en) Production of semiconductor
JPS5775459A (en) Manufacture of semiconductor device
JPS57102051A (en) Manufacture of semiconductor device
JPS577949A (en) Multilayer wiring method
JPS57120351A (en) Manufacture of semiconductor device