JPS577945A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS577945A JPS577945A JP8239680A JP8239680A JPS577945A JP S577945 A JPS577945 A JP S577945A JP 8239680 A JP8239680 A JP 8239680A JP 8239680 A JP8239680 A JP 8239680A JP S577945 A JPS577945 A JP S577945A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- wiring
- stage section
- psg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the disconnection of the second layer wiring by smoothing the shape of a stage section of a phosphorus silicate glass (PSG) film of a layer insulating film in multilayer wiring structure. CONSTITUTION:The first layer wiring 3 in Al is formed on the insulating film 2 covering the surface of a semiconductor substrate 1 into which an element is made up. The PSG film 4 is built up on the wiring 3. A stage section 4' corresponding to the stage section of the first layer wiring 3 is built up at that time. Ions are injected onto the PSG film 4 from the direction vertical to the surface of the substrate, and a damage layer 5 is formed on the surface. The stage section of the PSG film 4 is made a gently inclined shape by etching the damage layer 5 by using an etching agent of hydrogen fluoride. The second layer wiring 6 is made up on the PSG film 4. Accordingly, the danger of the disconnection of the second layer wiring is removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8239680A JPS577945A (en) | 1980-06-18 | 1980-06-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8239680A JPS577945A (en) | 1980-06-18 | 1980-06-18 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS577945A true JPS577945A (en) | 1982-01-16 |
JPS6146054B2 JPS6146054B2 (en) | 1986-10-11 |
Family
ID=13773420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8239680A Granted JPS577945A (en) | 1980-06-18 | 1980-06-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS577945A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50110284A (en) * | 1974-02-06 | 1975-08-30 | ||
JPS54142981A (en) * | 1978-04-27 | 1979-11-07 | Matsushita Electric Ind Co Ltd | Manufacture of insulation gate type semiconductor device |
-
1980
- 1980-06-18 JP JP8239680A patent/JPS577945A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50110284A (en) * | 1974-02-06 | 1975-08-30 | ||
JPS54142981A (en) * | 1978-04-27 | 1979-11-07 | Matsushita Electric Ind Co Ltd | Manufacture of insulation gate type semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6146054B2 (en) | 1986-10-11 |
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