JPS5252569A - Method of imprity diffusion for semiconductor substrate - Google Patents

Method of imprity diffusion for semiconductor substrate

Info

Publication number
JPS5252569A
JPS5252569A JP12877075A JP12877075A JPS5252569A JP S5252569 A JPS5252569 A JP S5252569A JP 12877075 A JP12877075 A JP 12877075A JP 12877075 A JP12877075 A JP 12877075A JP S5252569 A JPS5252569 A JP S5252569A
Authority
JP
Japan
Prior art keywords
diffusion
imprity
semiconductor substrate
group iii
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12877075A
Other languages
Japanese (ja)
Other versions
JPS5936418B2 (en
Inventor
Taketoshi Kato
Toshio Yonezawa
Masashi Minato
Tomohito Kobayashi
Haruyuki Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12877075A priority Critical patent/JPS5936418B2/en
Publication of JPS5252569A publication Critical patent/JPS5252569A/en
Publication of JPS5936418B2 publication Critical patent/JPS5936418B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To achieve deep and defect-free diffusion of group III or V element on an Si substrate with ease by adding an acid or alkaline solution of GeO2 in an aqueous organic solvent solution of group III or V element oxide.
COPYRIGHT: (C)1977,JPO&Japio
JP12877075A 1975-10-25 1975-10-25 Impurity diffusion method for silicon substrate Expired JPS5936418B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12877075A JPS5936418B2 (en) 1975-10-25 1975-10-25 Impurity diffusion method for silicon substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12877075A JPS5936418B2 (en) 1975-10-25 1975-10-25 Impurity diffusion method for silicon substrate

Publications (2)

Publication Number Publication Date
JPS5252569A true JPS5252569A (en) 1977-04-27
JPS5936418B2 JPS5936418B2 (en) 1984-09-04

Family

ID=14993030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12877075A Expired JPS5936418B2 (en) 1975-10-25 1975-10-25 Impurity diffusion method for silicon substrate

Country Status (1)

Country Link
JP (1) JPS5936418B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691421A (en) * 1979-12-25 1981-07-24 Toshiba Corp Method for diffusing impurities in semiconductor
JP2017085126A (en) * 2011-07-25 2017-05-18 日立化成株式会社 Semiconductor substrate and method of manufacturing the same, solar battery element, and solar battery

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691421A (en) * 1979-12-25 1981-07-24 Toshiba Corp Method for diffusing impurities in semiconductor
JP2017085126A (en) * 2011-07-25 2017-05-18 日立化成株式会社 Semiconductor substrate and method of manufacturing the same, solar battery element, and solar battery

Also Published As

Publication number Publication date
JPS5936418B2 (en) 1984-09-04

Similar Documents

Publication Publication Date Title
JPS5275181A (en) Formation of oxide film
JPS5242461A (en) Method of oxidizing no
JPS5252569A (en) Method of imprity diffusion for semiconductor substrate
JPS52106279A (en) Manufacture of semiconductor ic
JPS51149397A (en) Scouring of polycaprolamide chip
JPS51139263A (en) Method of selective oxidation of silicon substrate
JPS5248978A (en) Process for production of semiconductor device
JPS5227354A (en) Impurity diffusion method for iii-v group compound semiconductor region
JPS5239371A (en) Method for selective diffusion
JPS5379479A (en) Namufacture of monolithic solar battery
JPS5346916A (en) Preparation of hydroxyacetic acid
JPS52119192A (en) Semiconductor
JPS52122479A (en) Etching solution of silicon
JPS52129275A (en) Impurity diffusion method
JPS5354972A (en) Production of semiconductor device
JPS5267971A (en) Manufacture of integrated circuit wafer
JPS522165A (en) Method of thermally diffusing selectively aluminum of semiconductor su bstrate
JPS5296878A (en) Manufacture of semiconductor laser element
JPS5275273A (en) Method of forming boron nitride-boron oxidesilicon oxide mixed film
JPS51117573A (en) Manufacturing method of semiconductor
JPS51135366A (en) Method of forming electrode film on silicon semiconductor device
JPS53125767A (en) Forming method of anode oxide film
JPS5263666A (en) Boron diffusion to silicon wafers
JPS5228867A (en) Process for formation of pn junction
JPS5275266A (en) Production of semiconductor device