JPS5252569A - Method of imprity diffusion for semiconductor substrate - Google Patents
Method of imprity diffusion for semiconductor substrateInfo
- Publication number
- JPS5252569A JPS5252569A JP12877075A JP12877075A JPS5252569A JP S5252569 A JPS5252569 A JP S5252569A JP 12877075 A JP12877075 A JP 12877075A JP 12877075 A JP12877075 A JP 12877075A JP S5252569 A JPS5252569 A JP S5252569A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- imprity
- semiconductor substrate
- group iii
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To achieve deep and defect-free diffusion of group III or V element on an Si substrate with ease by adding an acid or alkaline solution of GeO2 in an aqueous organic solvent solution of group III or V element oxide.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12877075A JPS5936418B2 (en) | 1975-10-25 | 1975-10-25 | Impurity diffusion method for silicon substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12877075A JPS5936418B2 (en) | 1975-10-25 | 1975-10-25 | Impurity diffusion method for silicon substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5252569A true JPS5252569A (en) | 1977-04-27 |
JPS5936418B2 JPS5936418B2 (en) | 1984-09-04 |
Family
ID=14993030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12877075A Expired JPS5936418B2 (en) | 1975-10-25 | 1975-10-25 | Impurity diffusion method for silicon substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5936418B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5691421A (en) * | 1979-12-25 | 1981-07-24 | Toshiba Corp | Method for diffusing impurities in semiconductor |
JP2017085126A (en) * | 2011-07-25 | 2017-05-18 | 日立化成株式会社 | Semiconductor substrate and method of manufacturing the same, solar battery element, and solar battery |
-
1975
- 1975-10-25 JP JP12877075A patent/JPS5936418B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5691421A (en) * | 1979-12-25 | 1981-07-24 | Toshiba Corp | Method for diffusing impurities in semiconductor |
JP2017085126A (en) * | 2011-07-25 | 2017-05-18 | 日立化成株式会社 | Semiconductor substrate and method of manufacturing the same, solar battery element, and solar battery |
Also Published As
Publication number | Publication date |
---|---|
JPS5936418B2 (en) | 1984-09-04 |
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