JPS57193064A - Insulated gate field effect transistor - Google Patents
Insulated gate field effect transistorInfo
- Publication number
- JPS57193064A JPS57193064A JP7851081A JP7851081A JPS57193064A JP S57193064 A JPS57193064 A JP S57193064A JP 7851081 A JP7851081 A JP 7851081A JP 7851081 A JP7851081 A JP 7851081A JP S57193064 A JPS57193064 A JP S57193064A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- depletion layer
- residue
- operated
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To obtain a function of adding to a constant current a current proportional to a difference when a voltage exceeds the prescribed value in case that a constant current flows continuously when a gate voltage is zero or very low level by employing a part of a region interposed between a drain part and a source part of an IGFET as a gate and the residue as a depletion layer. CONSTITUTION:A drain part 2 and a source part 3 are diffused at the prescribed interval on the surface side of an Si substrate 1, and a range that does not reach the entire width W of the region 4 interposed between the part 2 and the part 3 is used as a gate 5. Then, the residue is used as a depletion layer 6 of high injection density, and a depletion layer is not provided under the gate 5 made of a gate oxidized film 5a and the gate electrode 5a disposed above the film 5a. In this mannr, the layer 6 part is operated as a zero bias depletion type MOSFET, and the gate 5 part is operated as an enhancement type MOSFET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7851081A JPS57193064A (en) | 1981-05-22 | 1981-05-22 | Insulated gate field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7851081A JPS57193064A (en) | 1981-05-22 | 1981-05-22 | Insulated gate field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57193064A true JPS57193064A (en) | 1982-11-27 |
Family
ID=13663927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7851081A Pending JPS57193064A (en) | 1981-05-22 | 1981-05-22 | Insulated gate field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57193064A (en) |
-
1981
- 1981-05-22 JP JP7851081A patent/JPS57193064A/en active Pending
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