JPS5586222A - Level shift circuit - Google Patents
Level shift circuitInfo
- Publication number
- JPS5586222A JPS5586222A JP16427778A JP16427778A JPS5586222A JP S5586222 A JPS5586222 A JP S5586222A JP 16427778 A JP16427778 A JP 16427778A JP 16427778 A JP16427778 A JP 16427778A JP S5586222 A JPS5586222 A JP S5586222A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- fet2
- constant
- shift circuit
- level shift
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Manipulation Of Pulses (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To stabilize the operation of a level shift circuit easily by making the saturation current value of a diode much greater than the constant current of constant-current supply FET by decreasing the width or thickness of a semiconductor layer constituting the diode less than those of two FETs. CONSTITUTION:As a constant-current supply, FET2 serves, and FET1 operates as a source follower with loads of FET2 and diode 3. An input voltage applied to the gate of FET1 is level-shifted by a voltage drip across diode 3 and then outputted from a series-connection point between diode 3 and FET2. In this case, the width or thickness of a semiconductor layer constituting diode 3 is decreased less than those of FETs 1 and 2 to fix the saturation current value of diode 3 much greater than the constant-current value of FET2. Consequently, the operation of a level shift circuit can be stabilized in an extremely-easy method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16427778A JPS5586222A (en) | 1978-12-23 | 1978-12-23 | Level shift circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16427778A JPS5586222A (en) | 1978-12-23 | 1978-12-23 | Level shift circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5586222A true JPS5586222A (en) | 1980-06-28 |
Family
ID=15790023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16427778A Pending JPS5586222A (en) | 1978-12-23 | 1978-12-23 | Level shift circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5586222A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58145237A (en) * | 1982-02-22 | 1983-08-30 | Matsushita Electric Ind Co Ltd | Logical circuit for field effect transistor |
JPS5917724A (en) * | 1982-07-20 | 1984-01-30 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit |
JPH0332444U (en) * | 1990-08-15 | 1991-03-29 | ||
JP2011101351A (en) * | 2009-10-09 | 2011-05-19 | Semiconductor Energy Lab Co Ltd | Logic circuit and display device having the same |
-
1978
- 1978-12-23 JP JP16427778A patent/JPS5586222A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58145237A (en) * | 1982-02-22 | 1983-08-30 | Matsushita Electric Ind Co Ltd | Logical circuit for field effect transistor |
JPS5917724A (en) * | 1982-07-20 | 1984-01-30 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit |
JPH0332444U (en) * | 1990-08-15 | 1991-03-29 | ||
JP2011101351A (en) * | 2009-10-09 | 2011-05-19 | Semiconductor Energy Lab Co Ltd | Logic circuit and display device having the same |
US8786313B2 (en) | 2009-10-09 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and display device having the same |
JP2015019386A (en) * | 2009-10-09 | 2015-01-29 | 株式会社半導体エネルギー研究所 | Semiconductor device |
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