JPS55112009A - Bias circuit - Google Patents
Bias circuitInfo
- Publication number
- JPS55112009A JPS55112009A JP1836179A JP1836179A JPS55112009A JP S55112009 A JPS55112009 A JP S55112009A JP 1836179 A JP1836179 A JP 1836179A JP 1836179 A JP1836179 A JP 1836179A JP S55112009 A JPS55112009 A JP S55112009A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- emitter
- voltage
- resistance
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To improve the voltage reducing characteristics for the amplifier circuit by applying the output voltage of the power source ripple elimination filter to the base of the transistor and providing the load resistance between the emitter of the transistor mentioned above and the emitter of the emitter follower transistor. CONSTITUTION:The power source ripple elimination filter is formed with resistance R1 and capacitor C, and the output of this filter is applied to the constant voltage circuit consisting of resistance R2 and diode D. For transistor Q1, the constant voltage of the constant voltage circuit is supplied to the base to obtain the bias output through the emitter. For this bias output, the power source ripple is eliminated through the emitter follower circuit consisting of transistor Q2 and resistance R3. At the same time, the voltage reducing characteristics can be improved. The bias voltage thus formed in supplied to amplifier circuit 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1836179A JPS55112009A (en) | 1979-02-21 | 1979-02-21 | Bias circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1836179A JPS55112009A (en) | 1979-02-21 | 1979-02-21 | Bias circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55112009A true JPS55112009A (en) | 1980-08-29 |
JPS6211525B2 JPS6211525B2 (en) | 1987-03-13 |
Family
ID=11969546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1836179A Granted JPS55112009A (en) | 1979-02-21 | 1979-02-21 | Bias circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55112009A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4939479A (en) * | 1989-08-31 | 1990-07-03 | Sgs-Thomson Microelectronics (Pte) Ltd. | Audio amplifier |
-
1979
- 1979-02-21 JP JP1836179A patent/JPS55112009A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4939479A (en) * | 1989-08-31 | 1990-07-03 | Sgs-Thomson Microelectronics (Pte) Ltd. | Audio amplifier |
Also Published As
Publication number | Publication date |
---|---|
JPS6211525B2 (en) | 1987-03-13 |
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