JPS5691531A - Controller for gate threshold value - Google Patents
Controller for gate threshold valueInfo
- Publication number
- JPS5691531A JPS5691531A JP16974979A JP16974979A JPS5691531A JP S5691531 A JPS5691531 A JP S5691531A JP 16974979 A JP16974979 A JP 16974979A JP 16974979 A JP16974979 A JP 16974979A JP S5691531 A JPS5691531 A JP S5691531A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- charge pump
- ring oscillator
- substrate bias
- pump circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Abstract
PURPOSE:To make it possible to set a threshold voltage to a random value, by controlling the operation of a ring oscillator or charge pump circuit by a switch element. CONSTITUTION:The own substrate bias circuit consists of ring oscillator 10 and charge pump circuit 20. Charge pump circuit 20 is composed of capacitor 21, MOS diode 22 connected forward from the other terminal of capacitor 21 to the ground, and MOS diode 23 connected reversely from the other terminal of capacitor 21 to the output side. Then, a voltage passed through diode 23 is outputted as substrate bias voltage VBG of the own substrate bias circuit. On the other hand, the output of inverter sequence 40 in phase with the input and output is applied to the gate of MOS transistor 14 of ring oscillator 10.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16974979A JPS5691531A (en) | 1979-12-26 | 1979-12-26 | Controller for gate threshold value |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16974979A JPS5691531A (en) | 1979-12-26 | 1979-12-26 | Controller for gate threshold value |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5691531A true JPS5691531A (en) | 1981-07-24 |
Family
ID=15892124
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16974979A Pending JPS5691531A (en) | 1979-12-26 | 1979-12-26 | Controller for gate threshold value |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5691531A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS595320A (en) * | 1982-06-30 | 1984-01-12 | Mitsubishi Electric Corp | On-chip electric power supply generating circuit |
JPS6058658A (en) * | 1983-09-12 | 1985-04-04 | Hitachi Ltd | Cmos integrated circuit device and inspecting method thereof |
JPS60253254A (en) * | 1984-05-29 | 1985-12-13 | Toshiba Corp | Automatic setting device for mos transistor threshold value |
EP0637874B1 (en) * | 1993-08-02 | 1998-04-01 | Siemens Aktiengesellschaft | MOS switching stage |
EP2079163A3 (en) * | 2008-01-08 | 2010-06-30 | Kabushiki Kaisha Toshiba | Random number generation device |
-
1979
- 1979-12-26 JP JP16974979A patent/JPS5691531A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS595320A (en) * | 1982-06-30 | 1984-01-12 | Mitsubishi Electric Corp | On-chip electric power supply generating circuit |
JPH05726B2 (en) * | 1982-06-30 | 1993-01-06 | Mitsubishi Electric Corp | |
JPS6058658A (en) * | 1983-09-12 | 1985-04-04 | Hitachi Ltd | Cmos integrated circuit device and inspecting method thereof |
JPS60253254A (en) * | 1984-05-29 | 1985-12-13 | Toshiba Corp | Automatic setting device for mos transistor threshold value |
EP0637874B1 (en) * | 1993-08-02 | 1998-04-01 | Siemens Aktiengesellschaft | MOS switching stage |
EP2079163A3 (en) * | 2008-01-08 | 2010-06-30 | Kabushiki Kaisha Toshiba | Random number generation device |
US8805907B2 (en) | 2008-01-08 | 2014-08-12 | Kabushiki Kaisha Toshiba | Random number generation device having a ring oscillator |
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