JPS57155838A - Anti-parallel thyristor triggering device - Google Patents
Anti-parallel thyristor triggering deviceInfo
- Publication number
- JPS57155838A JPS57155838A JP4027481A JP4027481A JPS57155838A JP S57155838 A JPS57155838 A JP S57155838A JP 4027481 A JP4027481 A JP 4027481A JP 4027481 A JP4027481 A JP 4027481A JP S57155838 A JPS57155838 A JP S57155838A
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- thyristors
- triggered
- main
- optical auxiliary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
- H02M5/02—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc
- H02M5/04—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters
- H02M5/22—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M5/25—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
- H02M5/257—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/096—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the power supply of the control circuit being connected in parallel to the main switching element
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/105—Modifications for increasing the maximum permissible switched voltage in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
- H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for ac voltages or currents
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/941—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Thyristor Switches And Gates (AREA)
- Electronic Switches (AREA)
Abstract
PURPOSE: To avoid the application of a high voltage to an optical auxiliary thyristor, by connecting in pararel a series connection set of thyristors of the same polarity in a reversed polarity and connecting one end of an optical auxiliary thyristor another end of which is connected to the interconnection point of the thyristor sets to pulse transformers for thyristor triggering via diodes.
CONSTITUTION: When an optical auxiliary thyristor PTH1 is triggered with a forward voltage given to main thyristors TH1 and TH3, a trigger pulse is applied to a pulse transformer PT1 only and the main thyristors TH1 and TH3 are triggered. In this case, a diode D2 is reversingly biased and the voltage of the main thyristor TH3 or TH4 only is applied to the thyristor PTH1. When the nain thyristors TH2 and TH4 are at forward voltage, the diode D2 is conductive and the main thyristors TH2 and TH4 are triggered.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4027481A JPS57155838A (en) | 1981-03-23 | 1981-03-23 | Anti-parallel thyristor triggering device |
DE19823210484 DE3210484C2 (en) | 1981-03-23 | 1982-03-22 | Ignition circuit for anti-parallel connected thyristors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4027481A JPS57155838A (en) | 1981-03-23 | 1981-03-23 | Anti-parallel thyristor triggering device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57155838A true JPS57155838A (en) | 1982-09-27 |
JPS637689B2 JPS637689B2 (en) | 1988-02-18 |
Family
ID=12576046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4027481A Granted JPS57155838A (en) | 1981-03-23 | 1981-03-23 | Anti-parallel thyristor triggering device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS57155838A (en) |
DE (1) | DE3210484C2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3426769A1 (en) * | 1984-07-17 | 1986-01-23 | Siemens Ag | CIRCUIT ARRANGEMENT FOR MONITORING A THYRISTOR |
DE3627017A1 (en) * | 1986-08-09 | 1988-02-18 | Licentia Gmbh | High-voltage semiconductor contactor |
DE3731393A1 (en) * | 1987-09-18 | 1989-04-06 | Bosch Gmbh Robert | HIGH VOLTAGE SWITCH |
DE19844823C1 (en) * | 1998-09-30 | 1999-10-28 | Siemens Ag | Thyristor circuit for high power static converter |
-
1981
- 1981-03-23 JP JP4027481A patent/JPS57155838A/en active Granted
-
1982
- 1982-03-22 DE DE19823210484 patent/DE3210484C2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3210484A1 (en) | 1982-09-30 |
JPS637689B2 (en) | 1988-02-18 |
DE3210484C2 (en) | 1983-12-01 |
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