JPS5441658A - Gate unit of bidirectional photo thyristor - Google Patents

Gate unit of bidirectional photo thyristor

Info

Publication number
JPS5441658A
JPS5441658A JP10772177A JP10772177A JPS5441658A JP S5441658 A JPS5441658 A JP S5441658A JP 10772177 A JP10772177 A JP 10772177A JP 10772177 A JP10772177 A JP 10772177A JP S5441658 A JPS5441658 A JP S5441658A
Authority
JP
Japan
Prior art keywords
gate unit
photo thyristor
bidirectional photo
bidirectional
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10772177A
Other languages
Japanese (ja)
Inventor
Tsutomu Konishi
Nobutake Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10772177A priority Critical patent/JPS5441658A/en
Priority to DE19782839222 priority patent/DE2839222C2/en
Publication of JPS5441658A publication Critical patent/JPS5441658A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor

Abstract

PURPOSE: To surely prevent the mistrigger due to detour of gate current, by connecting the same polarity of two light emitting diodes and taking the junction as commom potential terminal.
COPYRIGHT: (C)1979,JPO&Japio
JP10772177A 1977-09-09 1977-09-09 Gate unit of bidirectional photo thyristor Pending JPS5441658A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10772177A JPS5441658A (en) 1977-09-09 1977-09-09 Gate unit of bidirectional photo thyristor
DE19782839222 DE2839222C2 (en) 1977-09-09 1978-09-08 Circuit for optical triggering of a thyristor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10772177A JPS5441658A (en) 1977-09-09 1977-09-09 Gate unit of bidirectional photo thyristor

Publications (1)

Publication Number Publication Date
JPS5441658A true JPS5441658A (en) 1979-04-03

Family

ID=14466254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10772177A Pending JPS5441658A (en) 1977-09-09 1977-09-09 Gate unit of bidirectional photo thyristor

Country Status (2)

Country Link
JP (1) JPS5441658A (en)
DE (1) DE2839222C2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5891368A (en) * 1981-11-25 1983-05-31 Sawafuji Electric Co Ltd Overspeed revolution preventing device for internal-combustion engine
JPS63164571U (en) * 1987-08-21 1988-10-26

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2834128B1 (en) 2001-12-21 2005-03-04 St Microelectronics Sa BIDIRECTIONAL PROTECTION DEVICE WITH LOW CAPACITY

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001867A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Semiconductive devices with integrated circuit switches
JPS583386B2 (en) * 1975-10-11 1983-01-21 株式会社日立製作所 Souhou Kousei Photo Thyristor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5891368A (en) * 1981-11-25 1983-05-31 Sawafuji Electric Co Ltd Overspeed revolution preventing device for internal-combustion engine
JPS63164571U (en) * 1987-08-21 1988-10-26
JPH036867Y2 (en) * 1987-08-21 1991-02-20

Also Published As

Publication number Publication date
DE2839222A1 (en) 1979-03-15
DE2839222C2 (en) 1983-10-27

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