JPS528778A - Schottky barrier diode - Google Patents

Schottky barrier diode

Info

Publication number
JPS528778A
JPS528778A JP8468875A JP8468875A JPS528778A JP S528778 A JPS528778 A JP S528778A JP 8468875 A JP8468875 A JP 8468875A JP 8468875 A JP8468875 A JP 8468875A JP S528778 A JPS528778 A JP S528778A
Authority
JP
Japan
Prior art keywords
schottky barrier
barrier diode
overvolatage
withstanding
giving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8468875A
Other languages
Japanese (ja)
Inventor
Hiroshi Gamo
Takahiko Iida
Hideaki Ikegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8468875A priority Critical patent/JPS528778A/en
Publication of JPS528778A publication Critical patent/JPS528778A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

Abstract

PURPOSE: To obtain a Schottky barrier diode withstanding inversion voltage breakdown by giving and overvolatage absorption power to P-n junction which constitutes a guard ring.
COPYRIGHT: (C)1977,JPO&Japio
JP8468875A 1975-07-10 1975-07-10 Schottky barrier diode Pending JPS528778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8468875A JPS528778A (en) 1975-07-10 1975-07-10 Schottky barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8468875A JPS528778A (en) 1975-07-10 1975-07-10 Schottky barrier diode

Publications (1)

Publication Number Publication Date
JPS528778A true JPS528778A (en) 1977-01-22

Family

ID=13837605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8468875A Pending JPS528778A (en) 1975-07-10 1975-07-10 Schottky barrier diode

Country Status (1)

Country Link
JP (1) JPS528778A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737886A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor device
JPS5868986A (en) * 1981-10-21 1983-04-25 Hitachi Ltd Schottky barrier-diode
US6175143B1 (en) * 1997-06-02 2001-01-16 Fuji Electric Co., Ltd. Schottky barrier
CN108447786A (en) * 2018-04-04 2018-08-24 华越微电子有限公司 A kind of processing technology that can reduce Schottky diode forward voltage drop value

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737886A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor device
JPS5868986A (en) * 1981-10-21 1983-04-25 Hitachi Ltd Schottky barrier-diode
US6175143B1 (en) * 1997-06-02 2001-01-16 Fuji Electric Co., Ltd. Schottky barrier
US6221688B1 (en) * 1997-06-02 2001-04-24 Fuji Electric Co. Ltd. Diode and method for manufacturing the same
US7112865B2 (en) 1997-06-02 2006-09-26 Fuji Electric Holdings Co., Ltd. Diode and method for manufacturing the same
US7187054B2 (en) 1997-06-02 2007-03-06 Fuji Electric Holdings Co., Ltd. Diode and method for manufacturing the same
US7276771B2 (en) 1997-06-02 2007-10-02 Fuji Electric Co., Ltd. Diode and method for manufacturing the same
CN108447786A (en) * 2018-04-04 2018-08-24 华越微电子有限公司 A kind of processing technology that can reduce Schottky diode forward voltage drop value

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