JPS51132976A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS51132976A JPS51132976A JP50057092A JP5709275A JPS51132976A JP S51132976 A JPS51132976 A JP S51132976A JP 50057092 A JP50057092 A JP 50057092A JP 5709275 A JP5709275 A JP 5709275A JP S51132976 A JPS51132976 A JP S51132976A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- cmis
- integration
- simplified
- act
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:The structure of CMIS-IC is simplified and the degree of its integration is improved by providing a guard ring to also act as a protection diode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50057092A JPS51132976A (en) | 1975-05-14 | 1975-05-14 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50057092A JPS51132976A (en) | 1975-05-14 | 1975-05-14 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51132976A true JPS51132976A (en) | 1976-11-18 |
Family
ID=13045847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50057092A Pending JPS51132976A (en) | 1975-05-14 | 1975-05-14 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51132976A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54131890A (en) * | 1978-04-05 | 1979-10-13 | Toshiba Corp | Semiconductor device |
JPS6281748A (en) * | 1985-10-04 | 1987-04-15 | Nec Corp | Complementary type semiconductor integrated circuit device |
JPH04113541U (en) * | 1991-03-23 | 1992-10-05 | 三菱農機株式会社 | combine |
US6825504B2 (en) * | 1999-05-03 | 2004-11-30 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of manufacturing the same |
JP2006286800A (en) * | 2005-03-31 | 2006-10-19 | Ricoh Co Ltd | Semiconductor device |
JP2008182258A (en) * | 2008-03-07 | 2008-08-07 | Mitsumi Electric Co Ltd | Semiconductor device |
-
1975
- 1975-05-14 JP JP50057092A patent/JPS51132976A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54131890A (en) * | 1978-04-05 | 1979-10-13 | Toshiba Corp | Semiconductor device |
JPS6250985B2 (en) * | 1978-04-05 | 1987-10-28 | Tokyo Shibaura Electric Co | |
JPS6281748A (en) * | 1985-10-04 | 1987-04-15 | Nec Corp | Complementary type semiconductor integrated circuit device |
JPH04113541U (en) * | 1991-03-23 | 1992-10-05 | 三菱農機株式会社 | combine |
US6825504B2 (en) * | 1999-05-03 | 2004-11-30 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of manufacturing the same |
JP2006286800A (en) * | 2005-03-31 | 2006-10-19 | Ricoh Co Ltd | Semiconductor device |
JP2008182258A (en) * | 2008-03-07 | 2008-08-07 | Mitsumi Electric Co Ltd | Semiconductor device |
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