JPS51132976A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51132976A
JPS51132976A JP50057092A JP5709275A JPS51132976A JP S51132976 A JPS51132976 A JP S51132976A JP 50057092 A JP50057092 A JP 50057092A JP 5709275 A JP5709275 A JP 5709275A JP S51132976 A JPS51132976 A JP S51132976A
Authority
JP
Japan
Prior art keywords
semiconductor device
cmis
integration
simplified
act
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50057092A
Other languages
Japanese (ja)
Inventor
Koichi Mikome
Shiro Araya
Mitsumasa Ashida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50057092A priority Critical patent/JPS51132976A/en
Publication of JPS51132976A publication Critical patent/JPS51132976A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:The structure of CMIS-IC is simplified and the degree of its integration is improved by providing a guard ring to also act as a protection diode.
JP50057092A 1975-05-14 1975-05-14 Semiconductor device Pending JPS51132976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50057092A JPS51132976A (en) 1975-05-14 1975-05-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50057092A JPS51132976A (en) 1975-05-14 1975-05-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS51132976A true JPS51132976A (en) 1976-11-18

Family

ID=13045847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50057092A Pending JPS51132976A (en) 1975-05-14 1975-05-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51132976A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131890A (en) * 1978-04-05 1979-10-13 Toshiba Corp Semiconductor device
JPS6281748A (en) * 1985-10-04 1987-04-15 Nec Corp Complementary type semiconductor integrated circuit device
JPH04113541U (en) * 1991-03-23 1992-10-05 三菱農機株式会社 combine
US6825504B2 (en) * 1999-05-03 2004-11-30 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
JP2006286800A (en) * 2005-03-31 2006-10-19 Ricoh Co Ltd Semiconductor device
JP2008182258A (en) * 2008-03-07 2008-08-07 Mitsumi Electric Co Ltd Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131890A (en) * 1978-04-05 1979-10-13 Toshiba Corp Semiconductor device
JPS6250985B2 (en) * 1978-04-05 1987-10-28 Tokyo Shibaura Electric Co
JPS6281748A (en) * 1985-10-04 1987-04-15 Nec Corp Complementary type semiconductor integrated circuit device
JPH04113541U (en) * 1991-03-23 1992-10-05 三菱農機株式会社 combine
US6825504B2 (en) * 1999-05-03 2004-11-30 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
JP2006286800A (en) * 2005-03-31 2006-10-19 Ricoh Co Ltd Semiconductor device
JP2008182258A (en) * 2008-03-07 2008-08-07 Mitsumi Electric Co Ltd Semiconductor device

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