JPS5344186A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5344186A
JPS5344186A JP11921776A JP11921776A JPS5344186A JP S5344186 A JPS5344186 A JP S5344186A JP 11921776 A JP11921776 A JP 11921776A JP 11921776 A JP11921776 A JP 11921776A JP S5344186 A JPS5344186 A JP S5344186A
Authority
JP
Japan
Prior art keywords
semiconductor device
buried layers
combisnation
brakdown
impairing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11921776A
Other languages
Japanese (ja)
Inventor
Osamu Ozawa
Koichi Kanzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11921776A priority Critical patent/JPS5344186A/en
Publication of JPS5344186A publication Critical patent/JPS5344186A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To let a high speed element and a high brakdown voltage element coexist relatively easily without impairing the characteristics of both by the combisnation of shallow buried layers and deep buried layers of a high impurity concentration.
JP11921776A 1976-10-04 1976-10-04 Semiconductor device Pending JPS5344186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11921776A JPS5344186A (en) 1976-10-04 1976-10-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11921776A JPS5344186A (en) 1976-10-04 1976-10-04 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4547780A Division JPS55146964A (en) 1980-04-07 1980-04-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5344186A true JPS5344186A (en) 1978-04-20

Family

ID=14755841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11921776A Pending JPS5344186A (en) 1976-10-04 1976-10-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5344186A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527697A (en) * 1978-08-11 1980-02-27 Siemens Ag Bipolar semiconductor integrated circuit and method of manufacturing same
US4368305A (en) * 1979-01-18 1983-01-11 Mitsubishi Chemical Industries, Ltd. Process for producing olefin polymers

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161786A (en) * 1974-11-27 1976-05-28 Hitachi Ltd
JPS51116687A (en) * 1975-04-07 1976-10-14 Hitachi Ltd Semiconductor integrated circuit device
JPS51132784A (en) * 1975-05-14 1976-11-18 Hitachi Ltd Production method of semiconductor device
JPS52154383A (en) * 1976-06-18 1977-12-22 Hitachi Ltd Semiconductor integrated circuit device
JPS533781A (en) * 1976-06-30 1978-01-13 Mitsubishi Electric Corp Semiconductor integrated circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5161786A (en) * 1974-11-27 1976-05-28 Hitachi Ltd
JPS51116687A (en) * 1975-04-07 1976-10-14 Hitachi Ltd Semiconductor integrated circuit device
JPS51132784A (en) * 1975-05-14 1976-11-18 Hitachi Ltd Production method of semiconductor device
JPS52154383A (en) * 1976-06-18 1977-12-22 Hitachi Ltd Semiconductor integrated circuit device
JPS533781A (en) * 1976-06-30 1978-01-13 Mitsubishi Electric Corp Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527697A (en) * 1978-08-11 1980-02-27 Siemens Ag Bipolar semiconductor integrated circuit and method of manufacturing same
US4368305A (en) * 1979-01-18 1983-01-11 Mitsubishi Chemical Industries, Ltd. Process for producing olefin polymers

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