JPS5764960A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5764960A
JPS5764960A JP55141049A JP14104980A JPS5764960A JP S5764960 A JPS5764960 A JP S5764960A JP 55141049 A JP55141049 A JP 55141049A JP 14104980 A JP14104980 A JP 14104980A JP S5764960 A JPS5764960 A JP S5764960A
Authority
JP
Japan
Prior art keywords
well
layer
electrodes
electrode
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55141049A
Other languages
Japanese (ja)
Inventor
Hiroshi Koyada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55141049A priority Critical patent/JPS5764960A/en
Publication of JPS5764960A publication Critical patent/JPS5764960A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To contrive to miniaturize a complementary MOS device by a method wherein at the CMOS device, a connecting hole to connect a P-well to the lowest potential and an electrode are omitted. CONSTITUTION:In the CMOS device, an N type resistance layer 12 is formed at the same time with a source and drain of a N channel MOSFET in the P-well 11 of an N type Si substrate 1, electrodes 3, 4 are fixed to both the edge of the layer 12, and the substrate 1 is held at the highest potential by the electrodes. The resistance value of the layer 12 is set up by sizes L, W. However at this time, the P-well 11 and the N type layer 12 are connected in common with the electrodes 3, 4. By this constitution, when one or plural independent low resistance resistors are to be formed, the hole for electrode and the electrode to connect the P-well 11 to the lowest potential can be omitted. Accordingly the resistance region can be reduced more than the conventional device, andthe device is miniaturized.
JP55141049A 1980-10-08 1980-10-08 Semiconductor device Pending JPS5764960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55141049A JPS5764960A (en) 1980-10-08 1980-10-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55141049A JPS5764960A (en) 1980-10-08 1980-10-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5764960A true JPS5764960A (en) 1982-04-20

Family

ID=15283055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55141049A Pending JPS5764960A (en) 1980-10-08 1980-10-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5764960A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892742U (en) * 1981-12-16 1983-06-23 東光株式会社 Electrostatic damage prevention element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892742U (en) * 1981-12-16 1983-06-23 東光株式会社 Electrostatic damage prevention element
JPS645899Y2 (en) * 1981-12-16 1989-02-14

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