JPS5625373A - Control circuit for power - Google Patents
Control circuit for powerInfo
- Publication number
- JPS5625373A JPS5625373A JP10145279A JP10145279A JPS5625373A JP S5625373 A JPS5625373 A JP S5625373A JP 10145279 A JP10145279 A JP 10145279A JP 10145279 A JP10145279 A JP 10145279A JP S5625373 A JPS5625373 A JP S5625373A
- Authority
- JP
- Japan
- Prior art keywords
- power
- transistor
- time
- field
- load
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
PURPOSE:To reduce switching loss by a method wherein a field-effect transistor for power is connected in parallel with a bipolar transistor for power. CONSTITUTION:Load 4 at an output terminal of a power source 3 and a parallel circuit of a bipolar transistor 1 for power and a field-effect transistor 2 for power are connected in series, the transistor 1 is turned ON-OFF, and the power of the load 4 is controlled by changing the time ratio of the ON-OFF. Signals turning the transistor 2 ON are provided to a gate of the transistor 2 for (tr+to+tf). Where tr and tf are rising time and falling time in case of the transition of the transistor 1. Thus, since the switching transient time of the field-effect transistor 2 is extremely short, the voltage for the switching transient time (tr, tf) of the transistor 1 is decreased, and power loss can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10145279A JPS5625373A (en) | 1979-08-08 | 1979-08-08 | Control circuit for power |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10145279A JPS5625373A (en) | 1979-08-08 | 1979-08-08 | Control circuit for power |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5625373A true JPS5625373A (en) | 1981-03-11 |
Family
ID=14301079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10145279A Pending JPS5625373A (en) | 1979-08-08 | 1979-08-08 | Control circuit for power |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5625373A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4511861A (en) * | 1982-11-15 | 1985-04-16 | General Electric Company | VCO Having field effect and bipolar transistors in parallel |
US4649291A (en) * | 1983-05-26 | 1987-03-10 | Kabushiki Kaisha Toshiba | Voltage reference circuit for providing a predetermined voltage to an active element circuit |
EP0631375A1 (en) * | 1993-06-25 | 1994-12-28 | STMicroelectronics S.r.l. | Output stage alternatively employing a MOS device or a bipolar device depending on the supply voltage and regulator for an alternator |
JP2012234926A (en) * | 2011-04-28 | 2012-11-29 | Sanken Electric Co Ltd | Semiconductor device |
JP2013125806A (en) * | 2011-12-14 | 2013-06-24 | Mitsubishi Electric Corp | Power semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS562735A (en) * | 1979-06-12 | 1981-01-13 | Ibm | Switching device |
-
1979
- 1979-08-08 JP JP10145279A patent/JPS5625373A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS562735A (en) * | 1979-06-12 | 1981-01-13 | Ibm | Switching device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4511861A (en) * | 1982-11-15 | 1985-04-16 | General Electric Company | VCO Having field effect and bipolar transistors in parallel |
US4649291A (en) * | 1983-05-26 | 1987-03-10 | Kabushiki Kaisha Toshiba | Voltage reference circuit for providing a predetermined voltage to an active element circuit |
EP0631375A1 (en) * | 1993-06-25 | 1994-12-28 | STMicroelectronics S.r.l. | Output stage alternatively employing a MOS device or a bipolar device depending on the supply voltage and regulator for an alternator |
US5541456A (en) * | 1993-06-25 | 1996-07-30 | Sgs-Thomson Microelectronics, S.R.L. | Output stage, and automotive regulator, with supply-dependent selection of MOS or bipolar driver |
JP2012234926A (en) * | 2011-04-28 | 2012-11-29 | Sanken Electric Co Ltd | Semiconductor device |
JP2013125806A (en) * | 2011-12-14 | 2013-06-24 | Mitsubishi Electric Corp | Power semiconductor device |
US9106156B2 (en) | 2011-12-14 | 2015-08-11 | Mitsubishi Electric Corporation | Power semiconductor device |
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