JPS54161893A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54161893A
JPS54161893A JP7108778A JP7108778A JPS54161893A JP S54161893 A JPS54161893 A JP S54161893A JP 7108778 A JP7108778 A JP 7108778A JP 7108778 A JP7108778 A JP 7108778A JP S54161893 A JPS54161893 A JP S54161893A
Authority
JP
Japan
Prior art keywords
region
island
type
transistor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7108778A
Other languages
Japanese (ja)
Inventor
Yukimasa Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7108778A priority Critical patent/JPS54161893A/en
Publication of JPS54161893A publication Critical patent/JPS54161893A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a rewritable ROM featuring the reduced power consumption and a proper input/output voltage level by providing the memory transistor and the transistor within the isolated island-shaped region plus the transistor complementary to the above mentioned transistors within the isolated region each. CONSTITUTION:P-type layer 2 is epitaxial-grown on N-type Si substrate 1, and N- type region 3 forming a closed circuit is formed by diffusion there until it reaches substrate 1. Layer 2 is then separated into island 2a and 2b. Then N<+>-type source and drain regions 41 and 51 are formed by diffusion within island-shaped layer 2a, and gate 81 is provided between region 41 and 51 via SiO2 film 61 and Si3N4 film 71 each. Thus, an N-channel MNOS memory transistor is formed. In the same method, the N-channel MOS transistor is formed within island region 2b, and P<+>- type source and drain regions 43 and 53 plus the P-channel element composed of gate electrode 73 via SiO2 film 63 are formed within isolated region 3.
JP7108778A 1978-06-13 1978-06-13 Semiconductor device Pending JPS54161893A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7108778A JPS54161893A (en) 1978-06-13 1978-06-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7108778A JPS54161893A (en) 1978-06-13 1978-06-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54161893A true JPS54161893A (en) 1979-12-21

Family

ID=13450388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7108778A Pending JPS54161893A (en) 1978-06-13 1978-06-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54161893A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63157464A (en) * 1986-12-22 1988-06-30 Matsushita Electronics Corp Semiconductor device
JPS63205966A (en) * 1987-02-23 1988-08-25 Matsushita Electronics Corp Manufacture of semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63157464A (en) * 1986-12-22 1988-06-30 Matsushita Electronics Corp Semiconductor device
JPS63205966A (en) * 1987-02-23 1988-08-25 Matsushita Electronics Corp Manufacture of semiconductor integrated circuit

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