JPS5561055A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5561055A JPS5561055A JP13429878A JP13429878A JPS5561055A JP S5561055 A JPS5561055 A JP S5561055A JP 13429878 A JP13429878 A JP 13429878A JP 13429878 A JP13429878 A JP 13429878A JP S5561055 A JPS5561055 A JP S5561055A
- Authority
- JP
- Japan
- Prior art keywords
- domain
- film
- sio2
- resistor
- covering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To decrease an element-occupied area as compared with that of substituting MOS transistor by utilizing a part of semiconductor film on an insulated substrate for load resistance. CONSTITUTION:A phosphorus ion is injected selectively in a channel domain 6 and a resistor domain 9 of a p-type Sifilm 2 on a sapphire substrate 1, and a critical voltage and a resistance value of MOS transistor are properly set. Next, a gate oxidized film 7 and a poly-Si gate 8 are formed, and a hot oxidized film 10 and an Si3N4 film 11 are built up selectively on a resistor domain 9. Next, n-type source and drain domains 3, 4 and a power wiring 5 are formed through hot diffusion of phosphorus. Processes follow then as covering with SiO2 12, opening to set an electrode wiring 14, covering with SiO2 15. A device occupying an extremely small area and connected with load resistance is thus obtainable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13429878A JPS5561055A (en) | 1978-10-31 | 1978-10-31 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13429878A JPS5561055A (en) | 1978-10-31 | 1978-10-31 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5561055A true JPS5561055A (en) | 1980-05-08 |
| JPS6237811B2 JPS6237811B2 (en) | 1987-08-14 |
Family
ID=15125006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13429878A Granted JPS5561055A (en) | 1978-10-31 | 1978-10-31 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5561055A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5289478A (en) * | 1976-01-22 | 1977-07-27 | Agency Of Ind Science & Technol | Mos integrated circuit |
-
1978
- 1978-10-31 JP JP13429878A patent/JPS5561055A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5289478A (en) * | 1976-01-22 | 1977-07-27 | Agency Of Ind Science & Technol | Mos integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6237811B2 (en) | 1987-08-14 |
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