GB1358795A - Integrated circuits - Google Patents

Integrated circuits

Info

Publication number
GB1358795A
GB1358795A GB291172A GB291172A GB1358795A GB 1358795 A GB1358795 A GB 1358795A GB 291172 A GB291172 A GB 291172A GB 291172 A GB291172 A GB 291172A GB 1358795 A GB1358795 A GB 1358795A
Authority
GB
United Kingdom
Prior art keywords
transistors
semi
conductor
thin film
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB291172A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1358795A publication Critical patent/GB1358795A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

1358795 Semi-conductor devices SIEMENS AG 21 Jan 1972 [26 Jan 1971] 2911/72 Heading H1K An integrated circuit includes an IGFET formed in a semi-conductor body 1 and a complementary thin film IGFET formed on an insulating layer 11, e.g. of oxide or lacquer, on the body 1. The semi-conductor material of the thin film transistor may be monocrystalline or polycrystalline and preferably comprises, as shown, N- (or P-) type source and drain regions 12, 13 separated by a P(N)-type region 18 underlying the gate electrode. The preferred material for the body 1 is Si, while the layer 12/18/13 may be of Si, Ge, GaAs, InSb, InAs, CdS, CdSe, PbS or Te. The circuit may be a logic element or a bi-stable trigger stage. In the latter case two pairs of transistors connected together as shown are provided, the body transistors performing the switching function while the thin film transistors serve as load transistors. Selector transistors to drive the switching transistors are also provided in the semi-conductor body 1.
GB291172A 1971-01-26 1972-01-21 Integrated circuits Expired GB1358795A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712103573 DE2103573A1 (en) 1971-01-26 1971-01-26 Integrated semiconductor component, in particular low-loss storage element, using complementary channel technology

Publications (1)

Publication Number Publication Date
GB1358795A true GB1358795A (en) 1974-07-03

Family

ID=5796939

Family Applications (1)

Application Number Title Priority Date Filing Date
GB291172A Expired GB1358795A (en) 1971-01-26 1972-01-21 Integrated circuits

Country Status (7)

Country Link
BE (1) BE778529A (en)
DE (1) DE2103573A1 (en)
FR (1) FR2123337A1 (en)
GB (1) GB1358795A (en)
IT (1) IT946799B (en)
LU (1) LU64648A1 (en)
NL (1) NL7201066A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4653026A (en) * 1981-08-12 1987-03-24 Hitachi, Ltd. Nonvolatile memory device or a single crystal silicon film
JPS58186961A (en) * 1982-04-26 1983-11-01 Toshiba Corp Semiconductor device
KR940002772B1 (en) * 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 Semiconductor integrated circuit and its manufacturing method

Also Published As

Publication number Publication date
IT946799B (en) 1973-05-21
NL7201066A (en) 1972-07-28
FR2123337A1 (en) 1972-09-08
DE2103573A1 (en) 1972-08-03
BE778529A (en) 1972-05-16
LU64648A1 (en) 1972-06-26

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees