FR2123337A1 - - Google Patents

Info

Publication number
FR2123337A1
FR2123337A1 FR7201674A FR7201674A FR2123337A1 FR 2123337 A1 FR2123337 A1 FR 2123337A1 FR 7201674 A FR7201674 A FR 7201674A FR 7201674 A FR7201674 A FR 7201674A FR 2123337 A1 FR2123337 A1 FR 2123337A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7201674A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2123337A1 publication Critical patent/FR2123337A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
FR7201674A 1971-01-26 1972-01-19 Withdrawn FR2123337A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712103573 DE2103573A1 (de) 1971-01-26 1971-01-26 Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik

Publications (1)

Publication Number Publication Date
FR2123337A1 true FR2123337A1 (fr) 1972-09-08

Family

ID=5796939

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7201674A Withdrawn FR2123337A1 (fr) 1971-01-26 1972-01-19

Country Status (7)

Country Link
BE (1) BE778529A (fr)
DE (1) DE2103573A1 (fr)
FR (1) FR2123337A1 (fr)
GB (1) GB1358795A (fr)
IT (1) IT946799B (fr)
LU (1) LU64648A1 (fr)
NL (1) NL7201066A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511539A1 (fr) * 1981-08-12 1983-02-18 Hitachi Ltd Dispositif de memoire remanente
EP0093557A2 (fr) * 1982-04-26 1983-11-09 Kabushiki Kaisha Toshiba Circuit intégré complémentaire à semi-conducteurs très rapide

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940002772B1 (ko) * 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치 및 그 제조방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511539A1 (fr) * 1981-08-12 1983-02-18 Hitachi Ltd Dispositif de memoire remanente
EP0093557A2 (fr) * 1982-04-26 1983-11-09 Kabushiki Kaisha Toshiba Circuit intégré complémentaire à semi-conducteurs très rapide
EP0093557A3 (en) * 1982-04-26 1985-09-11 Kabushiki Kaisha Toshiba High-speed complementary semiconductor integrated circuit

Also Published As

Publication number Publication date
BE778529A (fr) 1972-05-16
IT946799B (it) 1973-05-21
NL7201066A (fr) 1972-07-28
DE2103573A1 (de) 1972-08-03
LU64648A1 (fr) 1972-06-26
GB1358795A (en) 1974-07-03

Similar Documents

Publication Publication Date Title
AU468080B2 (fr)
AU2658571A (fr)
FR2123337A1 (fr)
AU2564071A (fr)
AU3005371A (fr)
AU2684071A (fr)
AU2742671A (fr)
AU2952271A (fr)
AU2941471A (fr)
AU2837671A (fr)
AU3025871A (fr)
AU2755871A (fr)
AU2907471A (fr)
AU2836771A (fr)
AU2963771A (fr)
AU2854371A (fr)
AU2875571A (fr)
AU2880771A (fr)
AU2940971A (fr)
AU2577671A (fr)
AU2503871A (fr)
AU2927871A (fr)
AU2930871A (fr)
AU2938071A (fr)
AU2885171A (fr)

Legal Events

Date Code Title Description
ST Notification of lapse