FR2123337A1 - - Google Patents
Info
- Publication number
- FR2123337A1 FR2123337A1 FR7201674A FR7201674A FR2123337A1 FR 2123337 A1 FR2123337 A1 FR 2123337A1 FR 7201674 A FR7201674 A FR 7201674A FR 7201674 A FR7201674 A FR 7201674A FR 2123337 A1 FR2123337 A1 FR 2123337A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19712103573 DE2103573A1 (de) | 1971-01-26 | 1971-01-26 | Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2123337A1 true FR2123337A1 (fr) | 1972-09-08 |
Family
ID=5796939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7201674A Withdrawn FR2123337A1 (fr) | 1971-01-26 | 1972-01-19 |
Country Status (7)
Country | Link |
---|---|
BE (1) | BE778529A (fr) |
DE (1) | DE2103573A1 (fr) |
FR (1) | FR2123337A1 (fr) |
GB (1) | GB1358795A (fr) |
IT (1) | IT946799B (fr) |
LU (1) | LU64648A1 (fr) |
NL (1) | NL7201066A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2511539A1 (fr) * | 1981-08-12 | 1983-02-18 | Hitachi Ltd | Dispositif de memoire remanente |
EP0093557A2 (fr) * | 1982-04-26 | 1983-11-09 | Kabushiki Kaisha Toshiba | Circuit intégré complémentaire à semi-conducteurs très rapide |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940002772B1 (ko) * | 1984-08-31 | 1994-04-02 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 집적회로 장치 및 그 제조방법 |
-
1971
- 1971-01-26 DE DE19712103573 patent/DE2103573A1/de active Pending
-
1972
- 1972-01-19 FR FR7201674A patent/FR2123337A1/fr not_active Withdrawn
- 1972-01-21 GB GB291172A patent/GB1358795A/en not_active Expired
- 1972-01-21 IT IT1965872A patent/IT946799B/it active
- 1972-01-24 LU LU64648D patent/LU64648A1/xx unknown
- 1972-01-26 BE BE778529A patent/BE778529A/fr unknown
- 1972-01-26 NL NL7201066A patent/NL7201066A/xx unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2511539A1 (fr) * | 1981-08-12 | 1983-02-18 | Hitachi Ltd | Dispositif de memoire remanente |
EP0093557A2 (fr) * | 1982-04-26 | 1983-11-09 | Kabushiki Kaisha Toshiba | Circuit intégré complémentaire à semi-conducteurs très rapide |
EP0093557A3 (en) * | 1982-04-26 | 1985-09-11 | Kabushiki Kaisha Toshiba | High-speed complementary semiconductor integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
BE778529A (fr) | 1972-05-16 |
IT946799B (it) | 1973-05-21 |
NL7201066A (fr) | 1972-07-28 |
DE2103573A1 (de) | 1972-08-03 |
LU64648A1 (fr) | 1972-06-26 |
GB1358795A (en) | 1974-07-03 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |