GB2051476B - Field effect transistor devices - Google Patents

Field effect transistor devices

Info

Publication number
GB2051476B
GB2051476B GB8013051A GB8013051A GB2051476B GB 2051476 B GB2051476 B GB 2051476B GB 8013051 A GB8013051 A GB 8013051A GB 8013051 A GB8013051 A GB 8013051A GB 2051476 B GB2051476 B GB 2051476B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
transistor devices
devices
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8013051A
Other versions
GB2051476A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4956179A external-priority patent/JPS55141760A/en
Priority claimed from JP15345079A external-priority patent/JPS5676575A/en
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of GB2051476A publication Critical patent/GB2051476A/en
Application granted granted Critical
Publication of GB2051476B publication Critical patent/GB2051476B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
GB8013051A 1979-04-21 1980-04-21 Field effect transistor devices Expired GB2051476B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4956179A JPS55141760A (en) 1979-04-21 1979-04-21 Field effect transistor
JP15345079A JPS5676575A (en) 1979-11-26 1979-11-26 Manufacture of junction type field effect semiconductor device

Publications (2)

Publication Number Publication Date
GB2051476A GB2051476A (en) 1981-01-14
GB2051476B true GB2051476B (en) 1983-06-22

Family

ID=26389976

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8013051A Expired GB2051476B (en) 1979-04-21 1980-04-21 Field effect transistor devices

Country Status (3)

Country Link
DE (1) DE3015158A1 (en)
GB (1) GB2051476B (en)
NL (1) NL188776C (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676576A (en) * 1979-11-26 1981-06-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
KR920022546A (en) * 1991-05-31 1992-12-19 김광호 Structure of MOS transistor and its manufacturing method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2728532A1 (en) 1977-06-24 1979-01-11 Siemens Ag Barrier layer FET on insulating substrate - has series of insular gate zones connected to common gate terminal and extending through whole layer thickness

Also Published As

Publication number Publication date
GB2051476A (en) 1981-01-14
NL188776B (en) 1992-04-16
NL188776C (en) 1992-09-16
DE3015158A1 (en) 1980-10-30
NL8002257A (en) 1980-10-23

Similar Documents

Publication Publication Date Title
DE2967520D1 (en) Field effect transistor circuit configuration
DE3071139D1 (en) Vertical field effect transistor
GB2002958B (en) Field effect transistors
JPS54114188A (en) Field effect transistor
DE3176252D1 (en) Field effect transistor
JPS55158675A (en) High piezooelectric mos field effect transistor
JPS5580359A (en) Field effect transistor
JPS5645079A (en) High cuttoffffrequency electriccfielddeffect transistor
EP0091831A3 (en) Mobility-modulation field effect transistor
DE3067237D1 (en) Transistor structure
GB2100926B (en) Field effect transistors
JPS54131884A (en) Field effect transistor having narrow channel
DE3063218D1 (en) A field effect transistor
JPS57104268A (en) Field effect transistor
GB2085656B (en) Field effect transistor
JPS567481A (en) Field effect type transistor
GB2051479B (en) Light-controllable transistor
GB2030769B (en) Field effect transistor
JPS55141755A (en) Field effect transistor controlled thyristor
DE3175010D1 (en) Field effect transistor
GB2021861B (en) Field effect transistors
JPS5698878A (en) Junction type field effect transistor
GB2052860B (en) Junction field effect transistor
JPS5627966A (en) Transistor
DE3063212D1 (en) Field effect transistor multivibrator

Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20000420