JPS52155980A - Insulated gate type field effect semiconductor device - Google Patents

Insulated gate type field effect semiconductor device

Info

Publication number
JPS52155980A
JPS52155980A JP7369976A JP7369976A JPS52155980A JP S52155980 A JPS52155980 A JP S52155980A JP 7369976 A JP7369976 A JP 7369976A JP 7369976 A JP7369976 A JP 7369976A JP S52155980 A JPS52155980 A JP S52155980A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
type field
insulated gate
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7369976A
Other languages
Japanese (ja)
Other versions
JPS6151430B2 (en
Inventor
Kenji Tokuyama
Tatsuo Yoshino
Yoichi Iga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7369976A priority Critical patent/JPS52155980A/en
Publication of JPS52155980A publication Critical patent/JPS52155980A/en
Publication of JPS6151430B2 publication Critical patent/JPS6151430B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To increase the dielectric strength between the drain and source of MISFETs by providing a region of the same conductivity type and a high surface impurity concentration near the edge part opposing to channel regions, within at least one regions of source and drain regions.
COPYRIGHT: (C)1977,JPO&Japio
JP7369976A 1976-06-21 1976-06-21 Insulated gate type field effect semiconductor device Granted JPS52155980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7369976A JPS52155980A (en) 1976-06-21 1976-06-21 Insulated gate type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7369976A JPS52155980A (en) 1976-06-21 1976-06-21 Insulated gate type field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS52155980A true JPS52155980A (en) 1977-12-24
JPS6151430B2 JPS6151430B2 (en) 1986-11-08

Family

ID=13525711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7369976A Granted JPS52155980A (en) 1976-06-21 1976-06-21 Insulated gate type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS52155980A (en)

Also Published As

Publication number Publication date
JPS6151430B2 (en) 1986-11-08

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